Suppr超能文献

二维范德瓦尔斯铁磁材料 CrGeTe 中的磁致伸缩效应。

Magneto-strain effects in 2D ferromagnetic van der Waal material CrGeTe[Formula: see text].

机构信息

Accelerator Physics and Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.

Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India.

出版信息

Sci Rep. 2023 May 26;13(1):8579. doi: 10.1038/s41598-023-35038-2.

Abstract

The idea of strain based manipulation of spins in magnetic two-dimensional (2D) van der Waal (vdW) materials leads to the development of new generation spintronic devices. Magneto-strain arises in these materials due to the thermal fluctuations and magnetic interactions which influences both the lattice dynamics and the electronic bands. Here, we report the mechanism of magneto-strain effects in a vdW material CrGeTe[Formula: see text] across the ferromagnetic (FM) transition. We find an isostructural transition in CrGeTe[Formula: see text] across the FM ordering with first order type lattice modulation. Larger in-plane lattice contraction than out-of-plane give rise to magnetocrystalline anisotropy. The signature of magneto-strain effects in the electronic structure are shift of the bands away from the Fermi level, band broadening and the twinned bands in the FM phase. We find that the in-plane lattice contraction increases the on-site Coulomb correlation ([Formula: see text]) between Cr atoms resulting in the band shift. Out-of-plane lattice contraction enhances the [Formula: see text] hybridization between Cr-Ge and Cr-Te atoms which lead to band broadening and strong spin-orbit coupling (SOC) in FM phase. The interplay between [Formula: see text] and SOC out-of-plane gives rise to the twinned bands associated with the interlayer interactions while the in-plane interactions gives rise to the 2D spin polarized states in the FM phase.

摘要

基于应变的操控自旋在二维(2D)范德华(vdW)材料中的想法导致了新一代自旋电子器件的发展。由于热涨落和磁相互作用,这些材料中会产生磁应变,这会影响晶格动力学和电子能带。在这里,我们报告了在铁磁(FM)转变过程中 vdW 材料 CrGeTe[Formula: see text]中磁应变效应的机制。我们发现 CrGeTe[Formula: see text]在 FM 有序化过程中存在同构结构转变,具有一级类型的晶格调制。面内晶格收缩大于面外晶格收缩导致磁各向异性。在电子结构中,磁应变效应的特征是能带从费米能级偏移、带宽展宽和 FM 相中孪晶带。我们发现,面内晶格收缩增加了 Cr 原子之间的局域库仑相关([Formula: see text]),导致能带偏移。面外晶格收缩增强了 Cr-Ge 和 Cr-Te 原子之间的[Formula: see text]杂化,导致 FM 相中带宽展宽和强自旋轨道耦合(SOC)。[Formula: see text]和 SOC 面外的相互作用导致了与层间相互作用相关的孪晶带,而面内相互作用导致了 FM 相中二维自旋极化态。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85fa/10219987/3bbf9085c3cb/41598_2023_35038_Fig1_HTML.jpg

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验