IEEE Trans Biomed Circuits Syst. 2019 Dec;13(6):1277-1287. doi: 10.1109/TBCAS.2019.2942261. Epub 2019 Sep 18.
This paper presents an autonomous multi-input (multi-beam) reconfigurable power-management chip for optimal energy harvesting from weak multi-axial human motion using a multi-beam piezoelectric energy harvester (PEH). The proposed chip adaptively operates in either voltage-mode or synchronous-electrical-charge-extraction-mode (VM-SECE) to improve overall efficiency, extract maximum energy regardless of the PEH beams' impedance/voltage/frequency variations, and protect the chip against large inputs, eliminating the need for high-voltage processes. It can simultaneously harvest energy from up to 6 beams using only one shared off-chip inductor. It uses an active negative voltage converter to extend the input-voltage range to as low as 35 mV. In addition, an active voltage doubler with a small footprint is implemented for faster cold start. A prototype VM-SECE chip was fabricated in a 0.35-μm 2P4M standard CMOS process occupying 1.9 mm active area. To fully characterize the chip performance, it was tested with both a commercial single-beam PEH and a custom-made PEH with five mechanically plucked thin-film beams. With the commercial PEH, compared to an on-chip full-wave active rectifier (FAR) with 95.6% efficiency, the VM-SECE chip harvested 3.28x more power for shock inputs at 1 Hz frequency and 4.39 g acceleration. With the custom 5-beam PEH for a pseudo-walking condition, compared to the on-chip FAR, the VM-SECE chip harvested 1.59x and 2.38x more power for 1-and 5-beam operations, respectively.
本文提出了一种自主多输入(多波束)可重构电源管理芯片,用于使用多波束压电能量收集器(PEH)从弱多轴人体运动中最佳地收集能量。该芯片自适应地在电压模式或同步电电荷提取模式(VM-SECE)下工作,以提高整体效率,无论 PEH 梁的阻抗/电压/频率变化如何,都能提取最大能量,并防止芯片受到大输入的影响,从而无需使用高压工艺。它可以使用一个共享的外部电感器同时从多达 6 个波束中收集能量。它使用有源负电压转换器将输入电压范围扩展到低至 35 mV。此外,还实现了一个具有小足迹的有源倍压器,以实现更快的冷启动。VM-SECE 芯片在 0.35-μm 2P4M 标准 CMOS 工艺中制造,占用 1.9 mm 的有源面积。为了全面表征芯片性能,它使用商业单波束 PEH 和带有五个机械拨动薄膜梁的定制 PEH 进行了测试。使用商用 PEH,与效率为 95.6%的片上全波有源整流器(FAR)相比,VM-SECE 芯片在 1 Hz 频率和 4.39 g 加速度的冲击输入下可多收集 3.28 倍的功率。对于伪步行条件下的定制 5 波束 PEH,与片上 FAR 相比,VM-SECE 芯片分别在 1 波束和 5 波束操作时可多收集 1.59 倍和 2.38 倍的功率。