Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, People's Republic of China.
Dalton Trans. 2019 Dec 3;48(47):17620-17625. doi: 10.1039/c9dt03755a.
Two new rare-earth-based chalcogenides EuCdGeQ4 (Q = S, Se) have been designed and constructed by using Eu2+ and the classical NLO-active SBUs of [CdQ4] and [GeQ4]. They crystallize in a non-centrosymmetric Ama2 (no. 40) space group. Benefiting from the synergistic effects of [GeQ4] and highly distorted [CdQ4] tetrahedra, both compounds possess type-I phase-matching behaviour and large powder second harmonic generation (SHG) effects at 2.09 μm (2.6 and 3.8 × AgGaS2 for sulfide and selenide), as well as large direct band gaps (2.5 eV and 2.25 eV). Besides, they melt congruently at relatively low temperatures (997 °C for EuCdGeS4 and 882 °C for EuCdGSe4), which is suitable for bulk crystal growth by the Bridgman method. In addition, their electronic structures and some optical coefficients are calculated by first-principles.
两种新型基于稀土的硫属化物 EuCdGeQ4(Q = S,Se)已通过使用 Eu2+ 和经典的 NLO 活性 SBUs [CdQ4] 和 [GeQ4] 设计和构建。它们结晶在非中心对称的 Ama2(No.40)空间群中。受益于 [GeQ4] 和高度扭曲的 [CdQ4] 四面体的协同作用,这两种化合物都具有类型-I 的相位匹配行为和在 2.09 μm 处的大粉末二次谐波产生(SHG)效应(对于硫化物和硒化物分别为 2.6 和 3.8×AgGaS2),以及大的直接带隙(2.5 eV 和 2.25 eV)。此外,它们在相对较低的温度下共熔(EuCdGeS4 为 997°C,EuCdGSe4 为 882°C),这适合通过 Bridgman 法进行块状晶体生长。此外,通过第一性原理计算了它们的电子结构和一些光学系数。