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铕汞锗硒和铕汞锡硫:两种具有强倍频响应的基于铕的四元红外非线性光学材料。

EuHgGeSe and EuHgSnS: Two Quaternary Eu-Based Infrared Nonlinear Optical Materials with Strong Second-Harmonic-Generation Responses.

作者信息

Xing Wenhao, Tang Chunlan, Wang Naizheng, Li Chunxiao, Li Zhuang, Wu Jieyun, Lin Zheshuai, Yao Jiyong, Yin Wenlong, Kang Bin

机构信息

Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.

Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, People's Republic of China.

出版信息

Inorg Chem. 2020 Dec 21;59(24):18452-18460. doi: 10.1021/acs.inorgchem.0c03176. Epub 2020 Nov 30.

Abstract

Metal chalcogenides play a critical role in the infrared (IR) nonlinear optical (NLO) field. However, Eu-based chalcogenide-type IR NLO materials are still scarce up to now. In this paper, two new quaternary Eu-based chalcogenides, EuHgGeSe and EuHgSnS, containing the "NLO active groups" [HgQ] (Q = S, Se) and [GeSe]/[SnS] were synthesized through traditional high-temperature solid-state reactions. They possess noncentrosymmetric structures, crystallizing in the 2 space group, and exhibit strong phase-matchable second-harmonic-generation (SHG) responses (3.1× and 1.77× that of AgGaS for EuHgGeSe and EuHgSnS, respectively). Meanwhile, the optical band gaps of EuHgGeSe (1.97 eV) and EuHgSnS (2.14 eV) were determined from UV-vis-NIR diffuse reflectance spectra. Differential scanning calorimetry (DSC) analyses reveal the congruent-melting behavior of EuHgGeSe. Furthermore, structural analysis and theoretical calculations verify the critical driving effects of [HgQ] tetrahedra on the strong SHG activity. The overall results demonstrate that EuHgGeSe and EuHgSnS are potential IR NLO materials.

摘要

金属硫族化合物在红外(IR)非线性光学(NLO)领域发挥着关键作用。然而,迄今为止,基于铕的硫族化合物型红外非线性光学材料仍然稀缺。在本文中,通过传统的高温固相反应合成了两种新型的基于铕的四元硫族化合物EuHgGeSe和EuHgSnS,它们含有“非线性光学活性基团”[HgQ](Q = S,Se)和[GeSe]/[SnS]。它们具有非中心对称结构,属于2空间群,并且表现出强烈的可相位匹配的二次谐波产生(SHG)响应(EuHgGeSe和EuHgSnS的SHG响应分别是AgGaS的3.1倍和1.77倍)。同时,通过紫外-可见-近红外漫反射光谱确定了EuHgGeSe(1.97 eV)和EuHgSnS(2.14 eV)的光学带隙。差示扫描量热法(DSC)分析揭示了EuHgGeSe的一致熔融行为。此外,结构分析和理论计算验证了[HgQ]四面体对强SHG活性的关键驱动作用。总体结果表明,EuHgGeSe和EuHgSnS是潜在的红外非线性光学材料。

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