Shahzad Kashif, Jia Kunpeng, Zhao Chao, Wang Dahai, Usman Muhammad, Luo Jun
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang District, Beijing 100029, China.
School of Microelectronics, University of Chinese Academy of Sciences (UCAS), Beijing 100031, China.
Materials (Basel). 2019 Nov 27;12(23):3928. doi: 10.3390/ma12233928.
The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 10 ions/cm. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.
研究了离子诱导缺陷对石墨烯的影响，以研究40纳米钯（Pd）与石墨烯接触时的接触电阻。在金属化之前，通过向转移后的石墨烯上辐照硼（B）、碳（C）、氮（N）和氩（Ar）离子来考虑和分析缺陷的发展情况。轰击能量设定为1.5 keV，离子剂量为1×10离子/cm。通过拉曼光谱研究不同离子辐照条件下的缺陷产率。尽管在金属沉积时溶解过程会自发发生，但金属与石墨烯之间的化学反应在较高温度下更为明显。在450℃、500℃、550℃和600℃退火后，进行快速热退火（RTA）处理以改善Pd/石墨烯接触。在550℃RTA和Ar离子辐照下，实现了95.2Ω-µm的最低接触电阻。我们已经证明，离子辐照显著增强了Pd/石墨烯接触，而不是Pd/原始石墨烯接触。因此，鉴于金属化之前离子诱导缺陷的结果争论，RTA对于降低接触电阻起到了很好的作用。
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