• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

具有铌接触和不对称转移特性的石墨烯场效应晶体管。

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

作者信息

Bartolomeo Antonio Di, Giubileo Filippo, Romeo Francesco, Sabatino Paolo, Carapella Giovanni, Iemmo Laura, Schroeder Thomas, Lupina Grzegorz

机构信息

Dipartimento di Fisica 'E.R. Caianiello' and Centro Interdipartimentale NanoMates, Università degli Studi di Salerno, Fisciano, Salerno, Italy. CNR-SPIN, Fisciano, Salerno, Italy.

出版信息

Nanotechnology. 2015 Nov 27;26(47):475202. doi: 10.1088/0957-4484/26/47/475202. Epub 2015 Nov 4.

DOI:10.1088/0957-4484/26/47/475202
PMID:26535591
Abstract

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

摘要

我们在机械剥离的单层石墨烯上使用铌电极制造背栅场效应晶体管，并在从大气压到10^(-4)毫巴的压力范围内进行电学表征。我们研究了室温真空脱气的影响，并报告了n分支中具有电阻平台的不对称转移特性。我们表明，弱化学吸附的铌在石墨烯上充当p型掺杂剂，并通过界面处未钉扎费米能级的铌/石墨烯相互作用来解释晶体管特性。

相似文献

1
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.具有铌接触和不对称转移特性的石墨烯场效应晶体管。
Nanotechnology. 2015 Nov 27;26(47):475202. doi: 10.1088/0957-4484/26/47/475202. Epub 2015 Nov 4.
2
Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors.镍和钛接触的基于石墨烯的场效应晶体管中的转移特性和接触电阻。
J Phys Condens Matter. 2013 Apr 17;25(15):155303. doi: 10.1088/0953-8984/25/15/155303. Epub 2013 Mar 25.
3
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors.基于石墨烯场效应晶体管转移特性中双谷现象的起源：电荷转移和接触处的部分钉扎。
Nanotechnology. 2011 Jul 8;22(27):275702. doi: 10.1088/0957-4484/22/27/275702. Epub 2011 May 20.
4
Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes.具有镍刻蚀石墨烯电极的 MoS2 器件的低电阻金属接触。
ACS Nano. 2015 Jan 27;9(1):869-77. doi: 10.1021/nn506567r. Epub 2014 Dec 22.
5
Work-Function Engineering of Graphene Electrodes by Self-Assembled Monolayers for High-Performance Organic Field-Effect Transistors.用于高性能有机场效应晶体管的自组装单分子层对石墨烯电极的功函数工程
J Phys Chem Lett. 2011 Apr 21;2(8):841-5. doi: 10.1021/jz200265w. Epub 2011 Mar 25.
6
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.器件视角下的黑磷场效应晶体管：接触电阻、双极性行为和缩放。
ACS Nano. 2014 Oct 28;8(10):10035-42. doi: 10.1021/nn502553m. Epub 2014 Oct 17.
7
Electrophoretic and field-effect graphene for all-electrical DNA array technology.电泳和场效应石墨烯在全电化 DNA 微阵列技术中的应用。
Nat Commun. 2014 Sep 5;5:4866. doi: 10.1038/ncomms5866.
8
Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.石墨烯场效应晶体管的电学和噪声特性：环境影响、噪声源和物理机制。
J Phys Condens Matter. 2010 Oct 6;22(39):395302. doi: 10.1088/0953-8984/22/39/395302. Epub 2010 Sep 10.
9
Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory.室温下石墨烯场效应晶体管中的负微分电阻：实验与理论。
ACS Nano. 2015 Jan 27;9(1):620-5. doi: 10.1021/nn5059437. Epub 2015 Jan 2.
10
Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.室温下石墨烯场效应晶体管操作中载流子注入势垒的狄拉克点移动。
ACS Appl Mater Interfaces. 2018 Apr 4;10(13):10618-10621. doi: 10.1021/acsami.8b02294. Epub 2018 Mar 21.

引用本文的文献

1
Emergent Cavity Junction around Metal-on-Graphene Contacts.金属 - 石墨烯接触周围的紧急腔结
ACS Nano. 2025 May 20;19(19):18156-18163. doi: 10.1021/acsnano.4c16191. Epub 2025 May 6.
2
Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.用于柔性电子器件的铁电栅控石墨烯场效应晶体管的弯曲稳定性
Materials (Basel). 2023 May 17;16(10):3798. doi: 10.3390/ma16103798.
3
A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene.一种用于消除石墨烯中界面杂质的改进型湿式转移方法。
Nanomaterials (Basel). 2023 Apr 27;13(9):1494. doi: 10.3390/nano13091494.
4
Glassy Carbon Electrode Modified with N-Doped Reduced Graphene Oxide Sheets as an Effective Electrochemical Sensor for Amaranth Detection.用氮掺杂还原氧化石墨烯片修饰的玻碳电极作为苋菜检测的有效电化学传感器
Materials (Basel). 2022 Apr 21;15(9):3011. doi: 10.3390/ma15093011.
5
Influence of SiO or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.SiO或h-BN衬底对化学衍生单层石墨烯室温电子输运的影响。
RSC Adv. 2019 Nov 21;9(65):38011-38016. doi: 10.1039/c9ra09197a. eCollection 2019 Nov 19.
6
A Facile Method for the Non-Covalent Amine Functionalization of Carbon-Based Surfaces for Use in Biosensor Development.一种用于生物传感器开发的碳基表面非共价胺功能化的简便方法。
Nanomaterials (Basel). 2020 Sep 10;10(9):1808. doi: 10.3390/nano10091808.
7
Electron Irradiation of Metal Contacts in Monolayer MoS Field-Effect Transistors.单层MoS场效应晶体管中金属接触的电子辐照
ACS Appl Mater Interfaces. 2020 Sep 9;12(36):40532-40540. doi: 10.1021/acsami.0c11933. Epub 2020 Aug 26.
8
Emerging 2D Materials and Their Van Der Waals Heterostructures.新兴二维材料及其范德华异质结构
Nanomaterials (Basel). 2020 Mar 22;10(3):579. doi: 10.3390/nano10030579.
9
Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors.超薄砷化锗场效应晶体管中二维传导的观测
ACS Appl Mater Interfaces. 2020 Mar 18;12(11):12998-13004. doi: 10.1021/acsami.0c00348. Epub 2020 Mar 9.
10
Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts.不同离子辐照对钯/石墨烯接触电阻的影响。
Materials (Basel). 2019 Nov 27;12(23):3928. doi: 10.3390/ma12233928.