Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragón, Universidad de Zaragoza, Zaragoza, Spain.
Phys Chem Chem Phys. 2019 Dec 18;22(1):196-202. doi: 10.1039/c9cp04413b.
The electronic properties of Tm and Lu atoms adsorbed on nanoscale Cu2N insulating islands and on a clean Cu(100) surface have been investigated by scanning tunnelling microscopy and spectroscopy, and density functional calculations modelling the electronic structure of the rare earth atoms were performed. While Lu adatoms display the same spectra on both surfaces, tunnelling spectra of Tm on Cu2N indicate a state at ≃0.8 V or ≃1.9 V bias, depending on the 4f population of the adatom, 4f12 or 4f13, which is not present on Tm atoms adsorbed on Cu(100). Although inelastic 4f-spin-flip excitations were not detected, variation of tunnelling through the strongly correlated d-electrons indicates that the insulating layer opens a pathway to access the electronic state of those 4f electrons in the single adatom.
通过扫描隧道显微镜和光谱学研究了吸附在纳米级 Cu2N 绝缘岛上和清洁 Cu(100)表面上的 Tm 和 Lu 原子的电子性质,并通过建模来计算稀土原子的电子结构。虽然 Lu adatoms 在两种表面上显示出相同的光谱,但在 Cu2N 上的 Tm 原子的隧道光谱表明存在一个状态,其在 ≃0.8 V 或 ≃1.9 V 偏压下,这取决于 adatoms 的 4f 态,4f12 或 4f13,而在吸附在 Cu(100)上的 Tm 原子中不存在。尽管没有检测到非弹性 4f-自旋翻转激发,但通过强相关 d 电子的隧道传输的变化表明,绝缘层为单原子中的那些 4f 电子的电子状态提供了一种途径。