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卤素原子在 B←N 嵌入式聚合物受体中的作用对全聚合物太阳能电池性能的影响。

Effects of Halogenation in B ← N Embedded Polymer Acceptors on Performance of All-Polymer Solar Cells.

机构信息

College of Materials Science and Engineering , Huaqiao University , Xiamen 361021 , P. R. China.

CAS Key Laboratory of Photochemistry, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , China.

出版信息

ACS Appl Mater Interfaces. 2020 Jan 15;12(2):2733-2742. doi: 10.1021/acsami.9b20214. Epub 2020 Jan 3.

Abstract

Halogenation, for example, fluorination and chlorination, is an effective strategy to regulate the performance of organic photovoltaic materials. Although fluorination has been widely applied to polymer acceptors, systematic studies on the comparison of nonhalogenated, fluorinated, and chlorinated polymer acceptors have been a blank to now. Herein, a B ← N embedded electron-deficient unit (A), namely, BNIDT was copolymerized with three electron-rich units (D), that is, benzodithiophene (BDT), fluorinated BDT, and chlorinated BDT to obtain three D-A polymers of BN-BDT, BN-BDT-F, and BN-BDT-Cl, respectively. The three polymers exhibit similar LUMOs of ca. -3.77 eV, whereas the HOMOs are remarkably decreased from BN-BDT (-5.46 eV) to BN-BDT-F (-5.71 eV) and further slightly lowered to BN-BDT-Cl (-5.74 eV). All-polymer solar cells (all-PSCs) were fabricated using PBDB-T as the donor and the three B ← N-based polymers as the acceptors. The efficiencies of all-PSCs were significantly promoted from nonhalogenated BN-BDT (1.60%) to fluorinated BN-BDT-F (3.71%) and further elevated to chlorinated BN-BDT-Cl (4.23%). Device characterizations revealed that halogenation on the polymer acceptors leads to enhanced hole-transfer driving forces and better donor/acceptor miscibility, for example, smaller domain sizes and root-mean-square roughness (rms) values, which further gives rise to higher and more balanced hole/electron mobilities and efficient physical processes, for example, efficient exciton dissociation and collection and weaker recombination losses in halogenated devices. This work demonstrates that the photovoltaic performance of nonhalogenated polymer acceptors can be remarkably boosted by fluorination and further enhanced by chlorination. This is the first systematic study on the halogenated polymer acceptors by comprehensively comparing nonhalogenated, fluorinated, and chlorinated ones.

摘要

例如,卤化作用(如氟化和氯化)是调节有机光伏材料性能的有效策略。尽管氟化已广泛应用于聚合物受体,但迄今为止,对非卤化、氟化和氯化聚合物受体的系统比较研究仍是空白。在此,我们将一个 B←N 嵌入式缺电子单元(A),即 BNIDT,与三个富电子单元(D),即苯并二噻吩(BDT)、氟化 BDT 和氯化 BDT,共聚得到三种 D-A 聚合物 BN-BDT、BN-BDT-F 和 BN-BDT-Cl。这三种聚合物具有相似的约 -3.77eV 的 LUMO,而 HOMO 则显著从 BN-BDT(-5.46eV)降低到 BN-BDT-F(-5.71eV),并进一步略微降低到 BN-BDT-Cl(-5.74eV)。使用 PBDB-T 作为供体,三种 B←N 基聚合物作为受体,制备了全聚合物太阳能电池(all-PSCs)。与非卤化 BN-BDT(1.60%)相比,all-PSCs 的效率显著提高到氟化 BN-BDT-F(3.71%),并进一步提高到氯化 BN-BDT-Cl(4.23%)。器件特性表明,聚合物受体上的卤化作用导致空穴转移驱动力增强和给体/受体混溶性更好,例如,较小的畴尺寸和均方根粗糙度(rms)值,这进一步导致更高和更平衡的空穴/电子迁移率和有效的物理过程,例如,卤化器件中有效的激子解离和收集以及较弱的复合损失。这项工作证明,非卤化聚合物受体的光伏性能可以通过氟化得到显著提高,并通过氯化进一步增强。这是首次通过综合比较非卤化、氟化和氯化聚合物受体来系统研究卤化聚合物受体。

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