School of Microelectronics, Shandong University, No. 1500 Shunhua Road, Lixia District, Jinan, Shandong Province, 250101, People's Republic of China. School of Information and Communication Engineering, University of Electronic Science and Technology of China, No.2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu, Sichuan, Chengdu, 611731, People's Republic of China. Optoelectronics Research Centre, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom.
Nanotechnology. 2020 Mar 27;31(13):13LT01. doi: 10.1088/1361-6528/ab6477. Epub 2019 Dec 20.
We report the single photon emission properties of III-nitride quantum dots (QDs) fabricated by electrochemical etching method from an epitaxial wafer. Through such top-down fabrication, QDs with diameters of sub-10 nm are obtained, embedded in GaN nanoneedles. Owing to the size induced quantum confinement effect, the photoluminescence of the QDs exhibits a 3.35 nm blueshift compared with that of the epitaxial wafer. At low temperature, a second order correlation value down to 0.123 is observed, indicating a high-purity single photon emission. Our QDs manifest single photon emission at a temperature up to 130 K with a high degree of polarization of 0.69, comparable to those QDs synthesized by epitaxial growth. Our work demonstrates single photon emission are viable in top-down QDs by electrochemical etching III-nitride wafers.
我们报告了通过电化学刻蚀方法从外延晶片制备的 III 族氮化物量子点（QD）的单光子发射特性。通过这种自上而下的制造方法，获得了直径小于 10nm 的嵌入 GaN 纳米针中的 QD。由于尺寸诱导的量子限制效应，QD 的光致发光与外延晶片相比发生了 3.35nm 的蓝移。在低温下，观察到第二阶相关值低至 0.123，表明具有高纯度的单光子发射。我们的 QD 在高达 130K 的温度下表现出单光子发射，并且具有高达 0.69 的高偏振度，与通过外延生长合成的那些 QD 相当。我们的工作表明，通过电化学刻蚀 III 族氮化物晶片，自上而下的 QD 中可以实现单光子发射。
