Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, South Korea.
Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, South Korea.
J Chem Phys. 2019 Dec 28;151(24):244701. doi: 10.1063/1.5128511.
Doping is one of the key technologies in modern semiconductor science and industry. However, the synthetic control of doped nanocrystals is difficult to achieve. Here, we report the facile synthesis of manganese (II) doped ZnSe nanocrystals with controlled dimensionality. A strong Lewis acid-base reaction using air-stable and environmentally friendly metal chlorides as precursors can readily produce a large amount of quantum-confined ZnSe:Mn nanocrystals. A combination of primary and secondary amines is used to control the synthetic chemistry, which enables the shape of the doped nanocrystals to be controlled. The final doping concentration of the products can be finely tunable, which is critical for carrier relaxation dynamics. It turns out that the threshold doping level for the maximum photoluminescence intensity of doped nanocrystals highly depends on their shape. Furthermore, this simple synthetic method is extendable to obtain various Mn-doped II-VI semiconductor nanocrystals such as CdS:Mn and ZnS:Mn. Our study will facilitate the fundamental understanding of the doped semiconductor nanocrystals with different shapes, which is potentially useful for a wide range of applications such as lighting, photocatalysis, and bioimaging.
掺杂是现代半导体科学和工业的关键技术之一。然而,掺杂纳米晶体的合成控制很难实现。在这里,我们报告了使用空气稳定且环保的金属氯化物作为前体制备具有可控维度的锰(II)掺杂的 ZnSe 纳米晶体的简便合成方法。使用强路易斯酸碱反应可以很容易地产生大量量子受限的 ZnSe:Mn 纳米晶体。使用伯胺和仲胺的组合来控制合成化学,从而可以控制掺杂纳米晶体的形状。最终产物的掺杂浓度可以进行精细调节,这对于载流子弛豫动力学至关重要。事实证明,掺杂纳米晶体的最大光致发光强度的阈值掺杂水平高度依赖于它们的形状。此外,这种简单的合成方法可以扩展到获得各种 Mn 掺杂的 II-VI 半导体纳米晶体,例如 CdS:Mn 和 ZnS:Mn。我们的研究将有助于深入了解具有不同形状的掺杂半导体纳米晶体,这对于照明、光催化和生物成像等广泛应用具有潜在的用途。