Singh Sukhvir, Semwal Manoj Kumar, Bhatt C P
Radiological Physics and Internal Dosimetry Group, Institute of Nuclear Medicine and Allied Sciences, New Delhi, India.
Department of Radiotherapy, Army Hospital (Research and Referral), New Delhi, India.
J Med Phys. 2019 Oct-Dec;44(4):239-245. doi: 10.4103/jmp.JMP_21_19. Epub 2019 Dec 11.
The purpose of the study was to estimate the backscatter electron dose in internal shielding during electron beam therapy using Monte Carlo (MC) simulations and Gafchromic film measurements.
About 6 and 9 MeV electron beams from a Varian 2100C linac were simulated using BEAMnrc MC code. Various clinical situations of internal shielding were simulated by modeling water phantoms with 2 mm lead sheets placed at different depths. Electron backscatter factors (EBF), a ratio of dose at tissue-shielding interface to the dose at the same point without the shielding, were estimated. The role of 2 mm aluminum in reduction of backscatter was investigated. The measurements were also performed using Gafchromic films and results were compared with MC simulations.
For particular beam energy, the EBF value initially increased with depth in the buildup region and then decreased rapidly. The highest value of EBF for both the energies is nearly same though at different depths. Decreased EBF was observed for 9 MeV beam in comparison to the 6 MeV beam for the same depth of shielding placement. Two millimeter aluminum reduced the backscatter by nearly 25% at maximum backscatter condition for both the energies, though the effectiveness slightly decreased at higher energy. The range of backscatter electrons was varying from 5 to 12 mm in the upstream direction from the interface. The Gafchromic film-measured EBF and MC-simulated EBF were matching well within the clinically acceptable limits except in close vicinity of tissue-lead interface.
This study provides an important clinical data to design internal shielding at the local clinical setup and confirms applicability of MC simulations in backscatter dose calculations at interfaces where physical measurements are difficult to perform.
本研究的目的是使用蒙特卡罗(MC)模拟和辐射变色薄膜测量来估计电子束治疗期间内部屏蔽中的背散射电子剂量。
使用BEAMnrc MC代码模拟瓦里安2100C直线加速器产生的约6和9 MeV电子束。通过对放置在不同深度的2 mm铅板的水模体进行建模,模拟了各种内部屏蔽的临床情况。估计了电子背散射因子(EBF),即组织-屏蔽界面处的剂量与无屏蔽时同一点处剂量的比值。研究了2 mm铝在减少背散射方面的作用。还使用辐射变色薄膜进行了测量,并将结果与MC模拟进行了比较。
对于特定的束能量,EBF值在积累区域最初随深度增加,然后迅速下降。两种能量下EBF的最高值虽然深度不同但几乎相同。在相同屏蔽放置深度下,与6 MeV束相比,9 MeV束的EBF降低。对于两种能量,在最大背散射条件下,2 mm铝可将背散射降低近25%,尽管在较高能量下效果略有下降。背散射电子的范围在界面上游方向为5至12 mm。除了在组织-铅界面附近外,辐射变色薄膜测量的EBF和MC模拟的EBF在临床可接受范围内匹配良好。
本研究为在局部临床设置中设计内部屏蔽提供了重要的临床数据,并证实了MC模拟在难以进行物理测量的界面处背散射剂量计算中的适用性。