Bazalova-Carter Magdalena, Liu Michael, Palma Bianey, Dunning Michael, McCormick Doug, Hemsing Erik, Nelson Janice, Jobe Keith, Colby Eric, Koong Albert C, Tantawi Sami, Dolgashev Valery, Maxim Peter G, Loo Billy W
Department of Radiation Oncology, Stanford University, Stanford, California 94305-5847.
SLAC National Accelerator Laboratory, Menlo Park, California 94025.
Med Phys. 2015 Apr;42(4):1606-13. doi: 10.1118/1.4914371.
To measure radiation dose in a water-equivalent medium from very high-energy electron (VHEE) beams and make comparisons to Monte Carlo (MC) simulation results.
Dose in a polystyrene phantom delivered by an experimental VHEE beam line was measured with Gafchromic films for three 50 MeV and two 70 MeV Gaussian beams of 4.0-6.9 mm FWHM and compared to corresponding MC-simulated dose distributions. MC dose in the polystyrene phantom was calculated with the EGSnrc/BEAMnrc and DOSXYZnrc codes based on the experimental setup. Additionally, the effect of 2% beam energy measurement uncertainty and possible non-zero beam angular spread on MC dose distributions was evaluated.
MC simulated percentage depth dose (PDD) curves agreed with measurements within 4% for all beam sizes at both 50 and 70 MeV VHEE beams. Central axis PDD at 8 cm depth ranged from 14% to 19% for the 5.4-6.9 mm 50 MeV beams and it ranged from 14% to 18% for the 4.0-4.5 mm 70 MeV beams. MC simulated relative beam profiles of regularly shaped Gaussian beams evaluated at depths of 0.64 to 7.46 cm agreed with measurements to within 5%. A 2% beam energy uncertainty and 0.286° beam angular spread corresponded to a maximum 3.0% and 3.8% difference in depth dose curves of the 50 and 70 MeV electron beams, respectively. Absolute dose differences between MC simulations and film measurements of regularly shaped Gaussian beams were between 10% and 42%.
The authors demonstrate that relative dose distributions for VHEE beams of 50-70 MeV can be measured with Gafchromic films and modeled with Monte Carlo simulations to an accuracy of 5%. The reported absolute dose differences likely caused by imperfect beam steering and subsequent charge loss revealed the importance of accurate VHEE beam control and diagnostics.
测量来自甚高能电子(VHEE)束在水等效介质中的辐射剂量,并与蒙特卡罗(MC)模拟结果进行比较。
使用Gafchromic薄膜测量由实验性VHEE束线在聚苯乙烯模体中输送的剂量,该束线有三个50 MeV和两个70 MeV、半高宽为4.0 - 6.9 mm的高斯光束,并与相应的MC模拟剂量分布进行比较。基于实验装置,使用EGSnrc/BEAMnrc和DOSXYZnrc代码计算聚苯乙烯模体中的MC剂量。此外,评估了2%的束能量测量不确定性和可能的非零束角扩展对MC剂量分布的影响。
对于50 MeV和70 MeV的VHEE束,所有束尺寸下MC模拟的百分深度剂量(PDD)曲线与测量值的偏差在4%以内。对于5.4 - 6.9 mm的50 MeV光束,8 cm深度处的中心轴PDD范围为14%至19%;对于4.0 - 4.5 mm的70 MeV光束,其范围为14%至18%。在0.64至7.46 cm深度处评估的规则形状高斯光束的MC模拟相对束轮廓与测量值的偏差在5%以内。2%的束能量不确定性和0.286°的束角扩展分别对应于50 MeV和70 MeV电子束深度剂量曲线的最大3.0%和3.8%的差异。规则形状高斯光束的MC模拟与薄膜测量之间的绝对剂量差异在10%至42%之间。
作者证明,50 - 70 MeV的VHEE束的相对剂量分布可用Gafchromic薄膜测量,并通过蒙特卡罗模拟建模,精度可达5%。所报告的绝对剂量差异可能是由不完善的束转向和随后的电荷损失引起的,这揭示了精确控制和诊断VHEE束的重要性。