Fu Zhihua, Ladnorg Tatjana, Gliemann Hartmut, Welle Alexander, Bashir Asif, Rohwerder Michael, Zhang Qiang, Schüpbach Björn, Terfort Andreas, Wöll Christof
Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Campus Nord, 76344 Eggenstein-Leopoldshafen, Germany.
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
Beilstein J Nanotechnol. 2019 Dec 11;10:2449-2458. doi: 10.3762/bjnano.10.235. eCollection 2019.
We present a new approach to study charge transport within 2D layers of organic semi-conductors (OSCs) using atomic force microscopy (AFM)-based lithography applied to self-assembled monolayers (SAMs), fabricated from appropriate organothiols. The extent of lateral charge transport was investigated by insulating pre-defined patches within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. - characteristics of differently shaped PAT-islands were measured using the AFM tip as a top electrode. We were able to determine a relationship between island size and electrical conductivity, and from this dependence, we could obtain information on the lateral charge transport and charge carrier mobility within the thin OSC layers. Our study demonstrates that AFM nanografting of appropriately functionalized OSC molecules provides a suitable method to determine intrinsic mobilities of charge carriers in OSC thin films. In particular, this method is rather insensitive with regard to influence of grain boundaries and other defects, which hamper the application of conventional methods for the determination of mobilities in macroscopic samples.
我们提出了一种新方法,用于研究有机半导体(OSC)二维层内的电荷传输。该方法利用基于原子力显微镜(AFM)的光刻技术,应用于由适当的有机硫醇制成的自组装单分子层(SAM)。通过用由大带隙链烷硫醇盐制成的绝缘SAM区域隔离基于OSC的SAM内预先定义的斑块,研究横向电荷传输的程度。使用苯基连接的蒽硫醇盐(PAT)、4-(蒽-2-基乙炔基)苄基硫醇盐来演示这种新方法。使用AFM针尖作为顶部电极测量不同形状的PAT岛的特性。我们能够确定岛尺寸与电导率之间的关系,并基于这种依赖性,获得有关薄OSC层内横向电荷传输和电荷载流子迁移率的信息。我们的研究表明,对适当功能化的OSC分子进行AFM纳米接枝,为确定OSC薄膜中电荷载流子的本征迁移率提供了一种合适的方法。特别是,这种方法对晶界和其他缺陷的影响相当不敏感,而这些缺陷会妨碍在宏观样品中应用传统方法来测定迁移率。