Deng Ya, Lai Yuanming, Zhao Xiaoxu, Wang Xiaowei, Zhu Chao, Huang Ke, Zhu Chao, Zhou Jiadong, Zeng Qingsheng, Duan Ruihuan, Fu Qundong, Kang Lixing, Liu Yang, Pennycook Stephen J, Wang X Renshaw, Liu Zheng
School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore.
School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering , Nanyang Technological University , Singapore 639798 , Singapore.
J Am Chem Soc. 2020 Feb 12;142(6):2948-2955. doi: 10.1021/jacs.9b11673. Epub 2020 Jan 28.
Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Low-temperature transport data reveal an enhanced superconducting transition temperature () of 1.6 K in the 3R-TaSe, which undoubtedly breaks the traditional perception of TaSe crystal as a material with close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced .
过渡金属二硫属化物（TMDs）已成为探索超导性和电荷密度波（CDW）等丰富物理现象的试验场。在此，我们报告了具有罕见3R相且超导性增强的原子级薄TaSe的合成。通过常压化学气相沉积（CVD）策略实现了3R相，并通过高分辨率像差校正扫描透射电子显微镜（STEM）得到证实。低温输运数据显示，3R-TaSe的超导转变温度（）提高到了1.6 K，这无疑打破了传统观念中TaSe晶体是一种超导转变温度接近0 K的材料的认知。这项工作展示了常压CVD在探索晶体多态性方面的优势，突出了层堆叠顺序在超导转变中的决定性作用，并为通过操控晶体结构来提高超导转变温度提供了新的见解。
