Saquilayan Glynnis Mae Q, Hiratsuka Junichi, Ichikawa Masahiro, Umeda Naotaka, Kojima Atsushi, Watanabe Kazuhiro, Tobari Hiroyuki, Kashiwagi Mieko
National Institutes for Quantum and Radiological Science and Technology, Naka, Ibaraki, Japan.
Rev Sci Instrum. 2020 Jan 1;91(1):013513. doi: 10.1063/1.5130430.
The behavior of the Cesium (Cs) in Cs-seeded negative ion sources has been investigated experimentally under the beam accelerations of up to 0.5 MeV. The pulse length was extended to 100 s to catch the precise variations in the Cs D2 emission, discharge power, negative ion current, and temperatures in the ion source. The variations of the negative ions were estimated by the beam current and the heat loads in the accelerator. This experiment shows that the buildup of temperature in the chamber walls lead to the evaporation of deposited Cs to enter the plasma region and influenced H ion production. The H ion beams were stably sustained by reducing the temperature rise of the chamber wall below 50 °C. A stable long pulse beam could be achieved through the temperature control of the surfaces inside the source chamber walls.
在高达0.5 MeV的束流加速条件下,对铯(Cs)注入负离子源中Cs的行为进行了实验研究。脉冲长度延长至100 s,以捕捉离子源中Cs D2发射、放电功率、负离子电流和温度的精确变化。通过加速器中的束流和热负荷估算负离子的变化。该实验表明,腔室壁温度升高导致沉积的Cs蒸发进入等离子体区域,并影响H离子的产生。通过将腔室壁的温度升高降低到50°C以下,H离子束得以稳定维持。通过控制源腔室壁内表面的温度,可以实现稳定的长脉冲束。