Wang Xiao-Ming, Chen Long, Sowade Enrico, Rodriguez Raul D, Sheremet Evgeniya, Yu Chun-Mei, Baumann Reinhard R, Chen Jin-Ju
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
Digital Printing and Imaging Technology, Chemnitz University of Technology, 09126 Chemnitz, Germany.
Nanomaterials (Basel). 2020 Jan 29;10(2):237. doi: 10.3390/nano10020237.
The properties and applications of Ag nanowires (AgNWs) are closely related to their morphology and composition. Therefore, controlling the growth process of AgNWs is of great significance for technological applications and fundamental research. Here, silver nanowires (AgNWs) were synthesized via a typical polyol method with the synergistic effect of Cl, Br, and Fe mediated agents. The synergistic impact of these mediated agents was investigated intensively, revealing that trace Fe ions provided selective etching and hindered the strong etching effect from Cl and Br ions. Controlling this synergy allowed the obtainment of highly uniform AgNWs with sub-30 nm diameter and an aspect ratio of over 3000. Transparent conductive films (TCFs) based on these AgNWs without any post-treatment showed a very low sheet resistance of 4.7 Ω sq, a low haze of 1.08% at a high optical transmittance of 95.2% (at 550 nm), and a high figure of merit (FOM) of 1210. TCFs exhibited a robust electrical performance with almost unchanged resistance after 2500 bending cycles. These excellent high-performance characteristics demonstrate the enormous potential of our AgNWs in the field of flexible and transparent materials.
银纳米线（AgNWs）的性质和应用与其形态和组成密切相关。因此，控制AgNWs的生长过程对技术应用和基础研究具有重要意义。在此，通过典型的多元醇法，在Cl、Br和Fe介导剂的协同作用下合成了银纳米线（AgNWs）。深入研究了这些介导剂的协同作用，发现痕量Fe离子提供了选择性蚀刻，并阻碍了Cl和Br离子的强蚀刻作用。控制这种协同作用能够获得直径小于30 nm且长径比超过3000的高度均匀的AgNWs。基于这些AgNWs的透明导电薄膜（TCFs）未经任何后处理，其方阻极低，为4.7 Ω/sq，在95.2%（550 nm处）的高光学透过率下雾度低至1.08%，优值（FOM）高达1210。TCFs表现出稳健的电学性能，在2500次弯曲循环后电阻几乎不变。这些优异的高性能特性证明了我们的AgNWs在柔性透明材料领域具有巨大潜力。
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