Li Yuxiu, Yuan Ximin, Yang Hongwei, Chao Yunxiu, Guo Shuailong, Wang Chuan
State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China.
Materials (Basel). 2019 Jan 28;12(3):401. doi: 10.3390/ma12030401.
High aspect ratio silver nanowires (AgNWs) with ultra-long length and thin diameter were synthesized through bromine ion (Br)-assisted one-step synthesis method. The bromine ions were used as pivotal passivating agent. When the molar ratio of Br/Cl was 1:4, the average diameter of AgNWs was as low as ~40 nm, the average length was as high as ~120 μm, and the aspect ratio reached 2500. Networks of AgNWs were fabricated using as-prepared high-quality AgNWs as conducting material and hydroxyethyl cellulose (HEC) as the adhesive polymer. As a result, a low sheet resistance down to ~3.5 Ω sq was achieved with a concomitant transmittance of 88.20% and a haze of 4.12%. The ultra-low sheet resistance of conductive film was attributed to the long and thin AgNWs being able to form a more effective network. The adhesion of the AgNWs to the substrate was 0/5B (ISO/ASTM). The insights given in this paper provide the key guidelines for bromine ion-assisted synthesis of long and thin AgNWs, and further designing low-resistance AgNW-based conductive film for optoelectronic devices.
通过溴离子（Br）辅助的一步合成法合成了具有超长长度和细直径的高纵横比银纳米线（AgNWs）。溴离子用作关键的钝化剂。当Br/Cl的摩尔比为1:4时，AgNWs的平均直径低至约40nm，平均长度高达约120μm，纵横比达到2500。以制备的高质量AgNWs作为导电材料，羟乙基纤维素（HEC）作为粘结聚合物，制备了AgNWs网络。结果，实现了低至约3.5Ω/sq的低方块电阻，同时具有88.20%的透光率和4.12%的雾度。导电膜的超低方块电阻归因于长而细的AgNWs能够形成更有效的网络。AgNWs与基底的附着力为0/5B（ISO/ASTM）。本文给出的见解为溴离子辅助合成长而细的AgNWs提供了关键指导，并为进一步设计用于光电器件的低电阻AgNW基导电膜提供了指导。
