Shipulin Ilya, Richter Stefan, Thomas Aleena Anna, Nielsch Kornelius, Hühne Ruben, Martovitsky Victor
V.L. Ginzburg Center for High-Temperature Superconductivity and Quantum Materials, P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia.
Institute for Metallic Materials, Leibniz IFW Dresden, 01069 Dresden, Germany.
Materials (Basel). 2020 Jan 31;13(3):630. doi: 10.3390/ma13030630.
We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(FeNi)As films with Ni doping of = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(FeNi)As single crystals shows good agreement, which confirms the high quality of the obtained films.
我们对通过脉冲激光沉积制备的、镍掺杂量分别为0.05和0.08的外延Ba(FeNi)As薄膜进行了详细的结构、磁输运和超导分析。X射线衍射研究表明这些薄膜具有高度的晶体完整性，其质量与单晶类似。此外，在高达9 T的磁场中对这些薄膜进行了磁输运测量。我们利用这些结果，在金兹堡-朗道-阿布里科索夫-戈尔科夫理论框架内，估算了该化合物在费米能级处的电子态密度、电子热容系数及其他电子参数，这些参数与掺杂浓度有关。将所测定的参数与类似的Ba(FeNi)As单晶的测量数据进行比较，结果显示出良好的一致性，这证实了所制备薄膜的高质量。
