Zhang Yuteng, Séguy Isabelle, Ridier Karl, Shalabaeva Victoria, Piedrahita-Bello Mario, Rotaru Aurelian, Salmon Lionel, Molnár Gábor, Bousseksou Azzedine
LCC, CNRS and Université de Toulouse, Toulouse, France. LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077 Toulouse, France.
J Phys Condens Matter. 2020 May 13;32(21):214010. doi: 10.1088/1361-648X/ab741e.
Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl))]/M (with M = Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.
制备了由ITO/[Fe(HB(1,2,4 - 三唑 - 1 - 基))]/M（M = Al或Ca）组成的多层交叉结，并对其电阻开关特性进行了研究。电流 - 电压 - 温度图显示开/关电阻比高达400，其中开态和关态分别定义为自旋交叉层的低电阻、低自旋态和高电阻、高自旋态。使用Al和Ca阴极获得了类似的结果，这表明绝缘自旋交叉膜中的电荷传输是电阻开关的起源，而不是电极处的电子注入。还研究了器件特性的可重复性和稳定性。
