Dolabella Simone, Frison Ruggero, Chahine Gilbert A, Richter Carsten, Schulli Tobias U, Tasdemir Zuhal, Alaca B Erdem, Leblebici Yusuf, Dommann Alex, Neels Antonia
EMPA, Swiss Federal Laboratories for Materials Science and Technology, Center for X-ray Analytics, Dübendorf, Switzerland.
Department of Chemistry, University of Fribourg, Fribourg, Switzerland.
J Appl Crystallogr. 2020 Feb 1;53(Pt 1):58-68. doi: 10.1107/S1600576719015504.
Silicon nanowire-based sensors find many applications in micro- and nano-electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and nano-fabricated silicon-based structures adopting the scanning X-ray diffraction microscopy technique for mapping the in-plane crystalline strain (∊) and tilt of a device which includes pillars with suspended nanowires on a substrate. It is shown how the micro- and nanostructures of this new type of nanowire system are influenced by critical steps of the fabrication process, such as electron-beam lithography and deep reactive ion etching. X-ray analysis performed on the 044 reflection shows a very low level of lattice strain (<0.00025 Δ/) but a significant degree of lattice tilt (up to 0.214°). This work imparts new insights into the crystal structure of micro- and nanomaterial-based sensors, and their relationship with critical steps of the fabrication process.
基于硅纳米线的传感器因其在纳米尺度下展现出的独特柔韧性和强度特性，在微纳机电系统中有诸多应用。这项工作首次采用扫描X射线衍射显微镜技术对这类微纳制造的硅基结构进行研究，以绘制包含在衬底上带有悬浮纳米线的柱体的器件的面内晶体应变（∊）和倾斜度。研究展示了这种新型纳米线系统的微纳结构如何受到制造过程中的关键步骤（如电子束光刻和深反应离子刻蚀）的影响。对044反射进行的X射线分析显示晶格应变水平极低（<0.00025 Δ/），但晶格倾斜度显著（高达0.214°）。这项工作为基于微纳材料的传感器的晶体结构及其与制造过程关键步骤的关系提供了新的见解。
