Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film.

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current-voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.