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基于聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐薄膜的电可重写非易失性存储器件

Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film.

作者信息

Salaoru Iulia, Pantelidis Christos Christodoulos

机构信息

Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9BH, UK.

出版信息

Micromachines (Basel). 2020 Feb 10;11(2):182. doi: 10.3390/mi11020182.

DOI:10.3390/mi11020182
PMID:32050693
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7074640/
Abstract

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current-voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.

摘要

在本研究中，我们研究了聚（3,4 - 亚乙基二氧噻吩）聚苯乙烯磺酸盐（PEDOT:PSS）交叉棒结构存储单元的存储行为。我们证明，通过电流 - 电压、耐久性和保持时间测试，所制备的Al/PEDOT:PSS/Al单元呈现出双极开关特性和可重复行为。我们将双极开关的物理起源归因于电场诱导的偶极重新取向导致的PEDOT:PSS电导率变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/f2cb221f60d4/micromachines-11-00182-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/1c4039529fed/micromachines-11-00182-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/4cba85415a57/micromachines-11-00182-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/151bee018107/micromachines-11-00182-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/9ea9debc5a24/micromachines-11-00182-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/65fc367dcc9a/micromachines-11-00182-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/f2cb221f60d4/micromachines-11-00182-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/1c4039529fed/micromachines-11-00182-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/4cba85415a57/micromachines-11-00182-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/151bee018107/micromachines-11-00182-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/9ea9debc5a24/micromachines-11-00182-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/65fc367dcc9a/micromachines-11-00182-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/175b/7074640/f2cb221f60d4/micromachines-11-00182-g006.jpg

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本文引用的文献

1
Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory.聚（3,4-乙撑二氧噻吩）-聚苯乙烯磺酸中的电阻开关记忆现象：可切换二极管效应与一次写入多次读取存储器的共存
Sci Rep. 2016 Jan 25;6:19594. doi: 10.1038/srep19594.
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Electrical bistability in a composite of polymer and barium titanate nanoparticles.
Philos Trans A Math Phys Eng Sci. 2009 Oct 28;367(1905):4227-34. doi: 10.1098/rsta.2009.0167.
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Overview of organic memory devices.有机存储器件概述。
Philos Trans A Math Phys Eng Sci. 2009 Oct 28;367(1905):4141-57. doi: 10.1098/rsta.2009.0165.