Park Young Min, Park Joon Sik, Chung Choong-Heui, Lee Sangyeob
Surface Technology Group, Korea Institute of Industrial Technology (KITECH), Incheon, 21999, Republic of Korea.
Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Data Brief. 2020 Jan 25;29:105177. doi: 10.1016/j.dib.2020.105177. eCollection 2020 Apr.
This article provides data on the scanning tunnelling microscopy (STM), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) images of InAs(001) surface. Using the frequency-modulation (FM) method in AFM and KPFM, atomic resolution topography and contact potential difference (CPD) images of InAs(001) surface were obtained. The InAs(001) surface reconstruction images observed by STM and AFM are compared. The effect of AFM tip condition and tip-sample distance to AFM and KPFM imaging is verified by measuring frequency shift vs. tip-sample distance spectroscopy. This data article is related to the article entitled, "Kelvin prove force microscopy and its application" (Melitz et al., 2011) [1].
本文提供了关于InAs(001)表面的扫描隧道显微镜（STM）、原子力显微镜（AFM）和开尔文探针力显微镜（KPFM）图像的数据。使用AFM和KPFM中的调频（FM）方法，获得了InAs(001)表面的原子分辨率形貌和接触电势差（CPD）图像。比较了通过STM和AFM观察到的InAs(001)表面重构图像。通过测量频移与针尖-样品距离光谱，验证了AFM针尖条件和针尖-样品距离对AFM和KPFM成像的影响。本数据文章与题为《开尔文探针力显微镜及其应用》（梅利茨等人，2011年）[1]的文章相关。
