Wu Qing-Ping, Chang Lu-Lu, Li Yu-Zeng, Liu Zheng-Fang, Xiao Xian-Bo
Department of Applied Physics, East China Jiaotong University, Nanchang, 330013, China.
School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang, 330004, China.
Nanoscale Res Lett. 2020 Feb 19;15(1):46. doi: 10.1186/s11671-020-3275-5.
We propose a new method for regulating valley pseudomagnetoresistance in ballistic graphene-based valley field-effect transistors by taking into account the Y-shaped Kekulé lattice distortion and electric barrier. The device involves valley injection and valley detection by ferromagnetic-strain source and drain. The valley manipulation in the channel is achieved via the Y-shaped Kekulé lattice distortion and electric barrier. The central mechanism of these devices lies on Y-shaped Kekulé lattice distortion in graphene can induce a valley precession, thus controlling the valley orientation of channel electrons and hence the current collected at the drain. We found that the tuning external bias voltage makes the valley pseudomagnetoresistance oscillate between positive and negative values and colossal tunneling valley pseudomagnetoresistance of over 30,000% can be achieved. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.
我们提出了一种新方法，通过考虑Y形凯库勒晶格畸变和电垒来调控基于弹道石墨烯的谷场效应晶体管中的谷赝磁阻。该器件通过铁磁应变源极和漏极实现谷注入和谷检测。沟道中的谷操纵是通过Y形凯库勒晶格畸变和电垒实现的。这些器件的核心机制在于石墨烯中的Y形凯库勒晶格畸变会引发谷进动，从而控制沟道电子的谷取向，进而控制漏极收集的电流。我们发现，调节外部偏置电压会使谷赝磁阻在正值和负值之间振荡，并且可以实现超过30000%的巨大隧穿谷赝磁阻。我们的结果表明，谷电子学与数字逻辑的协同作用可能为基于谷电子学的信息处理和可逆计算提供新的范例。
