基于气-液-固生长的物理气相沉积法合成多壁氮化硼（BN）纳米管

Synthesis of Multiwall Boron Nitride (BN) Nanotubes by a PVD Method Based on Vapor-Liquid-Solid Growth.

作者信息

Guo Hao, Xu Yonggang, Chen Hetuo, Wang Zhengjuan, Mao Xiaojian, Zhou Guohong, Zhang Jian, Wang Shiwei

机构信息

State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Materials (Basel). 2020 Feb 19;13(4):915. doi: 10.3390/ma13040915.

DOI:10.3390/ma13040915

PMID:32092885

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7078859/

Abstract

Multiwall boron nitride (BN) nanotubes were synthesized by a novel physical vapor deposition (PVD) method, in which the BN nanotubes grow on a compact substrate composed of AlN, γ-AlO, YO, and carbon powders. The obtained BN nanotubes assemble in an orderly manner with a typical length of over one millimeter and a diameter of one-hundred nanometers. The hollow multiwall tubes have a spherical tip, which is presumed to be a liquid drop at the synthesis temperature, indicating the vapor-liquid-solid (VLS) growth mechanism.

摘要

多壁氮化硼（BN）纳米管是通过一种新型物理气相沉积（PVD）方法合成的，其中BN纳米管在由AlN、γ-AlO、YO和碳粉组成的致密衬底上生长。所获得的BN纳米管有序组装，典型长度超过一毫米，直径为一百纳米。中空的多壁管具有球形尖端，据推测在合成温度下是液滴，这表明了气-液-固（VLS）生长机制。