Yoon Im Taek, Lee Juwon, Tran Ngoc Cuong, Yang Woochul
Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul 100-715, Korea.
Department of Physics, Dongguk University, 26 Phildong 3ga, Chung gu, Seoul 100-715, Korea.
Nanomaterials (Basel). 2020 Feb 22;10(2):380. doi: 10.3390/nano10020380.
For this study, polarity-controlled ZnO films were grown on lithium niobate (LiNbO) substrates without buffer layers using the pulsed-laser deposition technique. The interfacial structure between the ZnO films and the LiNbO was inspected using high-resolution transmission electron microscopy (HR-TEM) measurements, and X-ray diffraction (XRD) measurements were performed to support these HR-TEM results. The polarity determination of the ZnO films was investigated using piezoresponse force microscopy (PFM) and a chemical-etching analysis. It was verified from the PFM and chemical-etching analyses that the ZnO film grown on the (+z) LiNbO was Zn-polar ZnO, while the O-polar ZnO occurred on the (-z) LiNbO. Further, a possible mechanism of the interfacial atomic configuration between the ZnO on the (+z) LiNbO and that on the (-z) LiNbO was suggested. It appears that the electrostatic stability at the substrate surface determines the initial nucleation of the ZnO films, leading to the different polarities in the ZnO systems.
在本研究中,采用脉冲激光沉积技术,在无缓冲层的铌酸锂(LiNbO)衬底上生长极性可控的ZnO薄膜。利用高分辨率透射电子显微镜(HR-TEM)测量检查ZnO薄膜与LiNbO之间的界面结构,并进行X射线衍射(XRD)测量以支持这些HR-TEM结果。使用压电响应力显微镜(PFM)和化学蚀刻分析研究了ZnO薄膜的极性确定。通过PFM和化学蚀刻分析证实,在(+z)LiNbO上生长的ZnO薄膜是Zn极性ZnO,而O极性ZnO出现在(-z)LiNbO上。此外,还提出了(+z)LiNbO上的ZnO与(-z)LiNbO上的ZnO之间界面原子构型的可能机制。似乎衬底表面的静电稳定性决定了ZnO薄膜的初始成核,导致ZnO系统中出现不同的极性。