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具有缺陷的单层二硒化钼的热输运特性

Thermal transport properties of monolayer MoSe with defects.

作者信息

Ma Jiang-Jiang, Zheng Jing-Jing, Li Wei-Dong, Wang Dong-Hong, Wang Bao-Tian

机构信息

Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, China and Dongguan Neutron Science Center, Dongguan 523803, China and Shanxi Key Laboratory of Electromagnetic Protection Material and Technology, 33th Institute of China Electronics Technology Group Corporation, Taiyuan 030032, China.

Department of Physics, Taiyuan Normal University, Taiyuan 030002, China.

出版信息

Phys Chem Chem Phys. 2020 Mar 11;22(10):5832-5838. doi: 10.1039/d0cp00047g.

Abstract

Two-dimensional (2D) molybdenum diselenide (MoSe2) as one of the ultrathin transition metal dichalcogenides (TMDs) has attracted considerable attention because of its potential applications in thermoelectric and nano-electronic devices. Here, the thermal conductivity of monolayer MoSe2 and its responses to simulated size and defects are studied by nonequilibrium molecular dynamics simulations. With the increase of sample length, the thermal conductivity of monolayer MoSe2 nanoribbons exhibits an enhancement whereas it is insensitive to the width. At room temperature, the thermal conductivities of monolayer MoSe2 along armchair and zigzag directions are 17.758 and 18.932 W (m K)-1, respectively, which are consistent with previous results. The impact of defects on thermal conductivity has also been studied by varying the concentration of the vacancy from 0.1% to 0.5%. The results show that an increase of the defect concentration will greatly suppress the thermal conductivity. The 0.5% defect concentration with a Mo vacancy can result in a thermal conductivity reduction of ∼43%. Such a study would provide a good insight into the tunable thermal transport for potential applications of not only monolayer MoSe2, but also many other TMDs.

摘要

二维(2D)二硒化钼(MoSe2)作为超薄过渡金属二硫属化物(TMDs)之一,因其在热电和纳米电子器件中的潜在应用而备受关注。在此,通过非平衡分子动力学模拟研究了单层MoSe2的热导率及其对模拟尺寸和缺陷的响应。随着样品长度的增加,单层MoSe2纳米带的热导率呈现增强趋势,而对宽度不敏感。在室温下,单层MoSe2沿扶手椅方向和锯齿方向的热导率分别为17.758和18.932 W(m·K)-1,这与先前的结果一致。还通过将空位浓度从0.1%变化到0.5%研究了缺陷对热导率 的影响。结果表明,缺陷浓度的增加将极大地抑制热导率。具有Mo空位的0.5%缺陷浓度可导致热导率降低约43%。这样的研究不仅将为单层MoSe2,而且为许多其他TMDs的潜在应用中的可调热传输提供很好的见解。

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