Nagao Masanori, Miura Akira, Urushihara Daisuke, Maruyama Yuki, Goto Yosuke, Mizuguchi Yoshikazu, Moriyoshi Chikako, Kuroiwa Yoshihiro, Wang Yongming, Watauchi Satoshi, Asaka Toru, Takano Yoshihiko, Tadanaga Kiyoharu, Tanaka Isao
Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan.
Faculty of Engineering, Hokkaido University, Sapporo, Japan.
Front Chem. 2020 Feb 4;8:44. doi: 10.3389/fchem.2020.00044. eCollection 2020.
Ce Pr OBiS (0. 1 ≤ ≤ 0.9) single crystals were grown using a CsCl flux method. Their structural and physical properties were examined by X-ray diffraction, X-ray absorption, transmission electron microscopy, and electrical resistivity. All of the Ce Pr OBiS single crystals with 0.1 ≤ ≤ 0.9 exhibited tetragonal phase. With increasing Pr content, the -axis and -axis lattice parameters decreased and increased, respectively. Transmission electron microscope analysis of CePrOBiS ( = 0.9) single crystal showed no stacking faults. Atomic-resolution energy dispersive X-ray spectrometry mapping revealed that Bi, Ce/Pr, O, and S occupied different crystallographic sites, while Ce and Pr randomly occupied the same sites. X-ray absorption spectra showed that an increase of the Pr ratio increased the ratio of Ce/Ce. All of the Ce Pr OBiS crystals showed superconducting transition, with a maximum transition temperature of ~4 K at = 0.9.
采用CsCl助熔剂法生长了CePrₓOBiS（0.1≤x≤0.9）单晶。通过X射线衍射、X射线吸收、透射电子显微镜和电阻率对其结构和物理性质进行了研究。所有0.1≤x≤0.9的CePrₓOBiS单晶均呈现四方相。随着Pr含量的增加，a轴和c轴晶格参数分别减小和增大。CePr₀.₉OBiS单晶的透射电子显微镜分析表明不存在堆垛层错。原子分辨率能量色散X射线光谱映射显示Bi、Ce/Pr、O和S占据不同的晶体学位置，而Ce和Pr随机占据相同位置。X射线吸收光谱表明Pr比例的增加提高了Ce³⁺/Ce⁴⁺的比例。所有CePrₓOBiS晶体均显示出超导转变，在x = 0.9时最大转变温度约为4 K。
