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铕掺杂硫化镉量子点能量转移机制的新见解。

New insights on the energy transfer mechanisms of Eu-doped CdS quantum dots.

作者信息

Tan P M, Ca N X, Hien N T, Van H T, Do P V, Thanh L D, Yen V H, Tuyen V P, Peng Y, Tho P T

机构信息

Faculty of Fundamental Sciences, Thai Nguyen University of Technology, Thai Nguyen, Vietnam.

出版信息

Phys Chem Chem Phys. 2020 Mar 21;22(11):6266-6274. doi: 10.1039/c9cp06778g. Epub 2020 Mar 4.

Abstract

Eu-doped CdS quantum dots (QDs) with the Eu dopant concentration in the range of 0.5-10% and zinc blende (ZB) structure were successfully synthesized by a wet chemical method. The fabricated Eu-doped CdS QDs exhibited emissions in the visible window approximately at 465, 590, 618 and 696 nm, which correspond to the excitonic emission of CdS QDs and the electronic transitions of the intra 4f configuration from the D level to F, F and F levels of Eu dopant ions, respectively. Judd-Ofelt theory was used to estimate the properties of ligand field and luminescence quantum efficiency of the material. The interaction mechanism and the efficiency of the energy transfer process from CdS QDs to Eu ions were found by using Reisfeld's approximation formulas. The luminescence quenching of Eu-doped CdS QDs was studied through analysis of emission spectra and decay curves. The dominant interaction mechanism between Eu ions and energy transfer parameters have been found by fitting the decay curves to the Inokuti-Hirayama model. The cross-relaxation channels leading to the luminescence quenching of Eu have also been predicted.

摘要

通过湿化学方法成功合成了铕掺杂浓度在0.5 - 10%范围内且具有闪锌矿(ZB)结构的铕掺杂硫化镉量子点(QDs)。制备的铕掺杂硫化镉量子点在可见光窗口约465、590、618和696 nm处表现出发射,分别对应于硫化镉量子点的激子发射以及铕掺杂离子从D能级到F、F和F能级的4f组态内的电子跃迁。利用Judd - Ofelt理论估算了材料的配体场性质和发光量子效率。通过使用Reisfeld近似公式发现了从硫化镉量子点到铕离子的能量转移过程的相互作用机制和效率。通过发射光谱和衰减曲线分析研究了铕掺杂硫化镉量子点的发光猝灭。通过将衰减曲线拟合到Inokuti - Hirayama模型,发现了铕离子之间的主要相互作用机制和能量转移参数。还预测了导致铕发光猝灭的交叉弛豫通道。

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