de Jong A E F, Vonk V, Boćkowski M, Grzegory I, Honkimäki V, Vlieg E
Radboud University, Institute for Molecules and Materials, Heyendaalseweg 135, 6525AJ Nijmegen, Netherlands.
European Synchrotron Radiation Facility, CS 40220, F-38043, Grenoble Cedex 9, France.
Phys Rev Lett. 2020 Feb 28;124(8):086101. doi: 10.1103/PhysRevLett.124.086101.
The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the form of vacancies at both sides of the solid-liquid interface, is an important structural feature which governs the local physical properties. Our x-ray diffraction study reveals that the layering is very stable and persists up to a temperature of 1123 K and a nitrogen pressure of 32 bar. The Ga layer spacing agrees remarkably well with the Friedel oscillation period for this system.
结果表明，Ga与GaN(0001)之间的平衡原子界面结构包含衬底表面空位，随后是衬底诱导的分层以及液体中的优先横向有序排列。固液界面两侧以空位形式存在的点缺陷是决定局部物理性质的重要结构特征。我们的X射线衍射研究表明，这种分层非常稳定，在温度高达1123 K和氮气压为32 bar时仍然存在。Ga层间距与该系统的弗勒德振荡周期非常吻合。
