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用正电子湮没光谱研究4-己基-4'-异硫氰酸联苯近晶E相中的自由体积。

Free volume in the smectic-E phase of 4-hexyl-4' isothiocyanatobiphenyl studied by positron annihilation spectroscopy.

作者信息

Dryzek E, Juszyńska-Gałązka E, Zaleski R, Jasińska B, Eusébio M E S

机构信息

Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Kraków, Poland.

Institute of Physics, Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland.

出版信息

Phys Rev E. 2020 Feb;101(2-1):022705. doi: 10.1103/PhysRevE.101.022705.

DOI:10.1103/PhysRevE.101.022705
PMID:32168647
Abstract

Positron annihilation lifetime spectroscopy has been used to study 4-hexyl-4'-isothiocyanatobiphenyl. Changes of the orthopositronium lifetime parameters with temperature have been observed for the supercooled smectic-E phase. The measurements confirm that positronium is created and annihilates in a layer of a lower electron density containing alkyl chains of molecules. The two-state bond-lattice model of glass transition explains the thermal activation of the centers where orthopositronium is created and annihilates when the glass of the smectic-E phase softens. However, the subsequent cold crystallization of the softened regions also influences the orthopositronium lifetime and intensity, which complicates the picture seen by positrons. The measurements during isothermal crystallization suggest that it progresses in two stages. The first stage can be described by the Avrami equation with the Avrami exponent close to unity, which indicates low-dimensional crystallization. Similarly to liquid n alkanes, the application of pressure is equivalent to temperature lowering with the similar equivalence relationship between pressure and temperature, which seems to confirm the structure of the smectic-E phase with sublayers containing alkyl chains in a molten state. The dependence of the orthopositronium lifetime on pressure for the smectic-E phase may be described by the bubble model where the positronium bubble is approximated with a finite square potential well with the depth of U=1.45eV.

摘要

正电子湮没寿命谱已被用于研究4-己基-4'-异硫氰酸联苯。对于过冷近晶-E相,已观察到正电子素寿命参数随温度的变化。测量结果证实,正电子素在含有分子烷基链的较低电子密度层中产生并湮没。玻璃化转变的双态键晶格模型解释了在近晶-E相玻璃软化时正电子素产生和湮没中心的热激活。然而,软化区域随后的冷结晶也会影响正电子素的寿命和强度,这使得正电子所看到的情况变得复杂。等温结晶过程中的测量表明,结晶过程分两个阶段进行。第一阶段可以用阿弗拉米方程来描述,阿弗拉米指数接近1,这表明是低维结晶。与液态正构烷烃类似,施加压力相当于降低温度,压力和温度之间具有相似的等效关系,这似乎证实了近晶-E相的结构,其中包含处于熔融状态的烷基链子层。近晶-E相中正电子素寿命对压力的依赖性可以用气泡模型来描述,其中正电子素气泡用深度为U = 1.45eV的有限方势阱来近似。

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