School of Mathematics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
Key Laboratory of Computational Mathematics, Guangdong Province, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
Phys Rev E. 2020 Feb;101(2-1):022409. doi: 10.1103/PhysRevE.101.022409.
A genetic toggle switch would involve multistep reaction processes (e.g., complex promoter activation), creating memories between individual reaction events. Revealing the effect of this molecular memory is important for understanding intracellular processes such as cellular decision making. We propose a generalized genetic toggle switch model and use a generalized chemical master equation theory to account for the memory effect. Interestingly, we find that molecular memory can induce bimodality in this memory system although the corresponding memoryless counterpart is not bimodal. This finding implies a plausible alternative mechanism for phenotypic switching that is driven by molecular memory rather than by ultrasensitivity or cooperative binding as shown in previous studies. We also find that unbalanced memories arising from the processes by which mutually inhibiting transcription factors are produced can give rise to asymmetric bimodality without changing the positions of two peaks in the bimodal protein distribution. Given the prevalence of molecular memory in gene regulation, our findings would provide insights into cell fate decisions in growth and development.
遗传振子开关涉及多步反应过程(例如,复杂启动子激活),在单个反应事件之间产生记忆。揭示这种分子记忆的效果对于理解细胞内过程(如细胞决策)非常重要。我们提出了一个广义的遗传振子开关模型,并使用广义化学主方程理论来解释记忆效应。有趣的是,我们发现尽管对应的无记忆对应物不是双峰的,但分子记忆可以在这个记忆系统中诱导双峰性。这一发现意味着表型转换的一种可行的替代机制,这种机制是由分子记忆驱动的,而不是由先前研究中所示的超敏性或协同结合驱动的。我们还发现,由于相互抑制转录因子产生的过程中出现的不平衡记忆会导致不对称双峰,而不会改变双峰蛋白分布中两个峰的位置。鉴于分子记忆在基因调控中的普遍性,我们的发现将为生长和发育中的细胞命运决策提供新的见解。