Chuchina Victoria, Gubal Anna, Lyalkin Yegor, Glumov Oleg, Trefilov Ivan, Sorokina Angelina, Savinov Sergey, Solovyev Nikolay, Ganeev Alexander
Institute of Chemistry, St Petersburg State University, 199034, St Petersburg, Universitetskaya nab. 7/9, Russia.
Institute of Technology Sligo, Ash Lane, Sligo, F91 YW50, Ireland.
Rapid Commun Mass Spectrom. 2020 Jun 15;34(11):e8786. doi: 10.1002/rcm.8786.
Dopants in ionic conductors play a crucial role in achieving the required electrochemical properties. A slight variation in their concentration considerably affects the conductivity of crystals and their applicability as ionic conductors and laser materials. To ensure the growth of high-quality fluoride crystals, adequate approaches for the quantification of matrix and admixture/dopant components are required.
A panel of SrF - and GdF -doped LaF single crystals was investigated. The electrical conductivity of the crystals was measured using impedance spectroscopy in the frequency range 100 Hz-1 MHz to control for crystal quality. Pulsed glow discharge mass spectrometry (GDMS) was used to simultaneously quantify fluorine, strontium, lanthanum, and gadolinium in the crystals. X-ray fluorescence, scanning electron microscopy-energy dispersive X-ray spectroscopy, and arc optical emission spectrometry were used for validation.
Quasiperiodic intensity drifts under sputtering of the ionic conductors were observed and attributed to F redistribution on the sample surface, affecting surface conductivity and sputtering rate. Several sample preparation protocols were tested to address that effect. Full coating of the sample with a layer of silver several micrometers thick provided stable and effective sputtering. The parameters for the GDMS determination of F, Sr, La, and Gd were optimized. The elements' distribution was studied in different parts of the crystals.
An analytical approach to the direct multi-element analysis of fluoride-containing ionic conductors using pulsed GDMS with La Sr Gd F as an example was designed and tested. Instability effects of ionic conductivity were explained and coped with, providing effective and stable sputtering.
离子导体中的掺杂剂在实现所需的电化学性能方面起着至关重要的作用。其浓度的微小变化会显著影响晶体的电导率及其作为离子导体和激光材料的适用性。为确保高质量氟化物晶体的生长,需要有适当的方法来定量分析基质和混合/掺杂成分。
对一组掺锶氟化物和掺钆氟化物的氟化镧单晶进行了研究。使用阻抗谱在100Hz - 1MHz频率范围内测量晶体的电导率,以控制晶体质量。采用脉冲辉光放电质谱法(GDMS)同时定量分析晶体中的氟、锶、镧和钆。使用X射线荧光、扫描电子显微镜 - 能量色散X射线光谱法和电弧发射光谱法进行验证。
观察到离子导体溅射过程中的准周期性强度漂移,这归因于样品表面的氟重新分布,影响表面电导率和溅射速率。测试了几种样品制备方案以解决该效应。用几微米厚的银层完全覆盖样品可提供稳定有效的溅射。优化了GDMS测定氟、锶、镧和钆的参数。研究了晶体不同部位的元素分布。
以La Sr Gd F为例,设计并测试了一种使用脉冲GDMS对含氟离子导体进行直接多元素分析的分析方法。解释并应对了离子电导率的不稳定性效应,提供了有效且稳定的溅射。