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高压高温合成的WB的机电特性

Mechanical and Electrical Characteristics of WB Synthesized at High Pressure and High Temperature.

作者信息

Wang Changchun, Song Lele, Xie Yupeng

机构信息

College of Science, Jilin Institute of Chemical Technology, Jilin 132022, China.

Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.

出版信息

Materials (Basel). 2020 Mar 8;13(5):1212. doi: 10.3390/ma13051212.

DOI:10.3390/ma13051212
PMID:32182695
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7085032/
Abstract

Single-phase tungsten diboride (WB) was synthesized at high pressure and high temperature. The different grain sizes ranging from 300 nm to 3 µm were successfully obtained in WB by controlling the experimental conditions. The effects of grain size on hardness and resistivity properties were investigated. The Vickers hardness of WB was modulated with grain size. The maximum asymptotic Vickers hardness is 25.5 GPa for WB with a grain size of 300 nm which is a 10% increase compared to WB with a grain size of 3 µm. The optimal electrical resistivity of WB was 10 Ωm with the biggest grain size of 3 µm, which is ascribed to low grain boundary density. The superior properties of hardness and electrical resistivity demonstrate that WB should be a new functional hard material replacing WC which is widely used in industrial production.

摘要

在高压高温下合成了单相二硼化钨(WB)。通过控制实验条件,在WB中成功获得了300纳米至3微米范围内的不同晶粒尺寸。研究了晶粒尺寸对硬度和电阻率性能的影响。WB的维氏硬度随晶粒尺寸而变化。对于晶粒尺寸为300纳米的WB,最大渐近维氏硬度为25.5吉帕,与晶粒尺寸为3微米的WB相比增加了10%。WB的最佳电阻率为10Ω·m,晶粒尺寸最大为3微米,这归因于低晶界密度。硬度和电阻率的优异性能表明,WB应该是一种新型功能硬质材料,可替代工业生产中广泛使用的WC。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/2a29c6334dbd/materials-13-01212-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/461b8d5e0ac0/materials-13-01212-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/e36e0961b8a6/materials-13-01212-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/9433e8bf3b4e/materials-13-01212-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/ba7863bf300d/materials-13-01212-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/a69217b47071/materials-13-01212-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/2a29c6334dbd/materials-13-01212-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/461b8d5e0ac0/materials-13-01212-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/e36e0961b8a6/materials-13-01212-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/9433e8bf3b4e/materials-13-01212-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/ba7863bf300d/materials-13-01212-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/a69217b47071/materials-13-01212-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e70/7085032/2a29c6334dbd/materials-13-01212-g006.jpg

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Electronic and structural origin of ultraincompressibility of 5d transition-metal diborides MB(2) (M=W, Re, Os).5d过渡金属二硼化物MB₂(M = W、Re、Os)超压缩性的电子和结构起源
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