Zheng Xu-Hui, Zhao Jue-Wen, Chen Xiang, Cai Ruoke, Yang Guo-Xi, Zhu Jie-Ji, Tang Shan-Shun, Lin Zhi-Hong, Tao Si-Lu, Tong Qing-Xiao
Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Material of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China.
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China.
Chemistry. 2020 Jul 14;26(39):8588-8596. doi: 10.1002/chem.202000518. Epub 2020 Jun 18.
Two novel bipolar deep-blue fluorescent emitters, IP-PPI and IP-DPPI, featuring different lengths of the phenyl bridge, were designed and synthesized, in which imidazo[1,2-a]pyridine (IP) and phenanthroimidazole (PI) were proposed as an electron acceptor and an electron donor, respectively. Both of them exhibit outstanding thermal stability and high emission quantum yields. All the devices based on these two materials showed negligible efficiency roll-off with increasing current density. Impressively, non-doped organic light-emitting diodes (OLEDs) based on IP-PPI and IP-DPPI exhibited external quantum efficiencies (EQEs) of 4.85 % and 4.74 % with CIE coordinates of (0.153, 0.097) and (0.154, 0.114) at 10000 cd m , respectively. In addition, the 40 wt % IP-PPI doped device maintained a high EQE of 5.23 % with CIE coordinates of (0.154, 0.077) at 10000 cd m . The doped device based on 20 wt % IP-DPPI exhibited a higher deep-blue electroluminescence (EL) performance with a maximum EQE of up to 6.13 % at CIE of (0.153, 0.078) and maintained an EQE of 5.07 % at 10000 cd m . To the best of our knowledge, these performances are among the state-of-the art devices with CIE ≤0.08 at a high brightness of 10000 cd m . Furthermore, by doping a red phosphorescent dye Ir(MDQ) (MDQ=2-methyldibenzo[f,h]quinoxaline) into the IP-PPI and IP-DPPI hosts, high-performance red phosphorescent OLEDs with EQEs of 20.8 % and 19.1 % were achieved, respectively. This work may provide a new approach for designing highly efficient deep-blue emitters with negligible roll-off for OLED applications.
设计并合成了两种具有不同长度苯基桥的新型双极深蓝色荧光发射体IP-PPI和IP-DPPI,其中咪唑并[1,2-a]吡啶(IP)和菲并咪唑(PI)分别被用作电子受体和电子供体。它们都表现出出色的热稳定性和高发射量子产率。基于这两种材料的所有器件在电流密度增加时效率滚降可忽略不计。令人印象深刻的是,基于IP-PPI和IP-DPPI的非掺杂有机发光二极管(OLED)在10000 cd m时的外量子效率(EQE)分别为4.85%和4.74%,CIE坐标分别为(0.153, 0.097)和(0.154, 0.114)。此外,40 wt% IP-PPI掺杂器件在10000 cd m时保持了5.23%的高EQE,CIE坐标为(0.154, 0.077)。基于20 wt% IP-DPPI的掺杂器件表现出更高的深蓝色电致发光(EL)性能,在CIE为(0.153, 0.078)时最大EQE高达6.13%,在10000 cd m时保持5.07%的EQE。据我们所知,这些性能在10000 cd m的高亮度下属于CIE≤0.08的最先进器件。此外,通过将红色磷光染料Ir(MDQ)(MDQ = 2-甲基二苯并[f,h]喹喔啉)掺杂到IP-PPI和IP-DPPI主体中,分别实现了EQE为20.8%和19.1%的高性能红色磷光OLED。这项工作可能为设计用于OLED应用的具有可忽略滚降的高效深蓝色发射体提供一种新方法。