Casillas José Eduardo, Campa-Molina Jorge, Tzompantzi Francisco, Carbajal Arízaga Gregorio Guadalupe, López-Gaona Alejandro, Ulloa-Godínez Sandra, Cano Mario Eduardo, Barrera Arturo
Departamento de Ciencias Básicas, Centro Universitario de la Ciénega, Universidad de Guadalajara, Av. Universidad, No. 1115, Ocotlán C.P. 47820, Jalisco, Mexico.
Departamento de Electrónica, Universidad de Guadalajara, Marcelino García Barragán 1422, Guadalajara C.P. 44430, Jalisco, Mexico.
Materials (Basel). 2020 Mar 16;13(6):1345. doi: 10.3390/ma13061345.
This paper reports the sol-gel synthesis of AlO-NdO (Al-Nd-; = 5%, 10%, 15% and 25% of NdO) binary oxides and the photodegradation of diclofenac activated by UV light. Al-Nd-based catalysts were analyzed by N physisorption, XRD, TEM, SEM, UV-Vis and PL spectroscopies. The inclusion of NdO in the aluminum oxide matrix in the 10-25% range reduced the band gap energies from 3.35 eV for the γ-AlO to values as low as 3.13-3.20 eV, which are typical of semiconductor materials absorbing in the UV region. γ-AlO and Al-Nd-x binary oxides reached more than 92.0% of photoconverted diclofenac after 40 min of reaction. However, the photocatalytic activity in the diclofenac degradation using Al-Nd- with NdO contents in the range 10-25% was improved with respect to that of γ-AlO at short reaction times. The diclofenac photoconversion using γ-AlO was 63.0% at 10 min of UV light exposure, whereas Al-Nd-15 binary oxide reached 82.0% at this reaction time. The rate constants determined from the kinetic experiments revealed that the highest activities in the aqueous medium were reached with the catalysts with 15% and 25% of NdO and these compounds presented the lowest band gap energies. The experimental results also demonstrated that NdO acts as a separator of charges favoring the decrease in the recombination rate of electron-hole pairs.
本文报道了AlO-NdO(Al-Nd-;NdO含量为5%、10%、15%和25%)二元氧化物的溶胶-凝胶合成以及紫外光活化下双氯芬酸的光降解。通过N物理吸附、XRD、TEM、SEM、紫外-可见光谱和PL光谱对Al-Nd基催化剂进行了分析。在氧化铝基体中加入10%-25%的NdO,使带隙能量从γ-AlO的3.35 eV降低至低至3.13-3.20 eV,这是典型的在紫外区域吸收的半导体材料的带隙能量。反应40分钟后,γ-AlO和Al-Nd-x二元氧化物对双氯芬酸的光转化率超过92.0%。然而,在短反应时间内,使用NdO含量在10%-25%范围内的Al-Nd-进行双氯芬酸降解的光催化活性相对于γ-AlO有所提高。在紫外光照射10分钟时,使用γ-AlO的双氯芬酸光转化率为63.0%,而Al-Nd-15二元氧化物在该反应时间达到82.0%。动力学实验测定的速率常数表明,NdO含量为15%和25%的催化剂在水介质中具有最高活性,且这些化合物的带隙能量最低。实验结果还表明,NdO作为电荷分离器,有利于降低电子-空穴对的复合率。