Cho Yohei, Shoji Shusaku, Yamaguchi Akira, Hoshina Takuya, Fujita Takeshi, Abe Hideki, Miyauchi Masahiro
Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan.
Chem Commun (Camb). 2020 Apr 28;56(33):4611-4614. doi: 10.1039/d0cc00729c. Epub 2020 Mar 25.
Dry reforming of methane (DRM) is an attractive reaction that consumes two major greenhouse gases while producing the industrially important components of syngas. In this study, various semiconductors were examined as light-harvesting support materials to promote catalytic DRM reaction under mild conditions. Among the metal-loaded catalysts, rhodium-loaded tantalum oxynitride (Rh/TaON) drove the DRM reaction even under visible light irradiation (>400 nm), and its activity exceeded the thermal catalyst limit. According to our spectroscopic analysis and the surface temperature measurement, the bandgap excitation of TaON dominantly promotes the DRM reaction in addition to its photo-thermal effect.
甲烷干重整（DRM）是一个引人关注的反应，它消耗两种主要温室气体，同时生成合成气中具有工业重要性的成分。在本研究中，研究了各种半导体作为光捕获载体材料，以在温和条件下促进催化DRM反应。在负载金属的催化剂中，负载铑的氮氧化钽（Rh/TaON）即使在可见光照射（>400 nm）下也能驱动DRM反应，其活性超过了热催化剂的极限。根据我们的光谱分析和表面温度测量，除了光热效应外，TaON的带隙激发主要促进了DRM反应。
