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通过二硫键形成的双孔镉(II)配位聚合物:自修复及其在光敏光电器件中的应用

Biporous Cd(II) Coordination Polymer via Disulfide Bond Formation: Self-Healing and Application to Photosensitive Optoelectronic Device.

作者信息

Naskar Kaushik, Dey Arka, Maity Suvendu, Ray Partha Pratim, Ghosh Prasanta, Sinha Chittaranjan

机构信息

Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sec. III, Salt Lake, Kolkata 700106, India.

Department of Chemistry, R. K. Mission Residential College, Narendrapur, Kolkata 700103, India.

出版信息

Inorg Chem. 2020 Apr 20;59(8):5518-5528. doi: 10.1021/acs.inorgchem.0c00163. Epub 2020 Mar 27.

Abstract

A heteroporous metal-organic framework, [Cd(2,2'-DSB)(INH)(HO)] (), is fabricated by the reaction of CdI, 2-mercaptobenzoic acid (2-MBAH), and isoniazid (INH). The X-ray structure of the compound shows the bridging INH and 2,2'-disulfanediyldibenzoic acid (H2,2'-DSBA) around the Cd(II) ion center. 2-MBAH has been dimerized to the formation of 2,2'-DSB (S-S-bonded dianion), which has further extended to form the 2D network. However, supramolecular assembly via π···π and hydrogen bonds strengthens the structural motif within the 3D array. Optical stimulation generated the thiol radical under an argon environment followed by the electron paramagnetic resonance (EPR) study, but upon exposure to air, the EPR signal gradually disappeared by the formation of the S-S bond, which was commonly known as a self-healing property. Again, compound exhibited as a semiconducting material with a band gap of 3.7 eV. The characteristics of show that the conductivity is intensified by an optical response. The Schottky diode property of shows a lower barrier height, a lower resistance, and a higher conductivity upon illumination at 360 nm.

摘要

一种异质多孔金属有机框架化合物[Cd(2,2'-DSB)(INH)(HO)]( ),通过CdI、2-巯基苯甲酸(2-MBAH)和异烟肼(INH)反应制备而成。该化合物的X射线结构表明,在Cd(II)离子中心周围存在桥连的INH和2,2'-二硫代二苯甲酸(H2,2'-DSBA)。2-MBAH已二聚形成2,2'-DSB(S-S键合二价阴离子),并进一步扩展形成二维网络。然而,通过π···π和氢键的超分子组装加强了三维阵列中的结构基序。在氩气环境下,光激发产生硫醇自由基,随后进行电子顺磁共振(EPR)研究,但暴露在空气中时,EPR信号因形成S-S键而逐渐消失,这就是通常所说的自愈特性。此外,该化合物表现为一种带隙为3.7 eV的半导体材料。其特性表明,光响应增强了导电性。该化合物的肖特基二极管特性表明,在360 nm光照下,其势垒高度较低、电阻较低且导电性较高。

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