Suppr超能文献

高压下3.9纳米纳米晶体中位错的形核

Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure.

作者信息

Parakh Abhinav, Lee Sangryun, Harkins K Anika, Kiani Mehrdad T, Doan David, Kunz Martin, Doran Andrew, Hanson Lindsey A, Ryu Seunghwa, Gu X Wendy

机构信息

Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.

Mechanical Engineering, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea.

出版信息

Phys Rev Lett. 2020 Mar 13;124(10):106104. doi: 10.1103/PhysRevLett.124.106104.

Abstract

As circuitry approaches single nanometer length scales, it has become important to predict the stability of single nanometer-sized metals. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.

摘要

随着电路尺寸接近单纳米长度尺度,预测单纳米尺寸金属的稳定性变得至关重要。基于位错的行为可以预测较大尺度下金属的行为,但尚不清楚位错能否在单纳米尺寸下形成并持续存在。在此,我们报告了在金刚石对顶砧池中,在非静水压力下单个3.9纳米金纳米晶体中位错的形成。我们结合了X射线衍射、光吸收光谱和分子动力学模拟来表征所形成的缺陷,发现这些缺陷是表面成核的部分位错。这些结果表明,位错在单纳米长度尺度下仍然活跃,并且可以导致永久塑性。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验