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用于片上表面增强拉曼散射传感器的具有高场增强的混合等离子体光栅狭缝波导。

Hybrid plasmonic grating slot waveguide with high field enhancement for an on-chip surface-enhanced Raman scattering sensor.

作者信息

Li Shiyu, Xia Li, Yang Zhao, Zhou Minghui, Zhao Benyang, Li Wei

出版信息

Appl Opt. 2020 Jan 20;59(3):748-755. doi: 10.1364/AO.383198.

Abstract

We design and theoretically investigate a surface-enhanced Raman scattering (SERS) sensor based on the hybrid plasmonic grating slot waveguide. The sensor is formed by combining a dielectric deep slot waveguide and a metallic grating slot waveguide. The proposed sensor exhibits a high field enhancement with a maximum enhancement factor of 7580.9 at the wavelength of 785 nm, revealing that the electric field in such hybrid plasmonic grating slot waveguide can be extremely strengthened. To better characterize the performance of the sensor in the SERS application, the total normalized volumetric enhancement factor (TNVEF) is proposed, which is determined by both the ||-approximation-based volumetric field enhancement and Raman scattered light collection efficiency. The TNVEF is utilized to characterize the influences of the structural parameters on the sensor and further optimize the sensing structure. Such on-chip SERS sensor can be integrated with a micro-laser and a micro-multiplexer on a photonic platform to realize an all-integrated on-chip SERS detection system.

摘要

我们设计并从理论上研究了一种基于混合等离子体光栅狭缝波导的表面增强拉曼散射(SERS)传感器。该传感器由介电深狭缝波导和金属光栅狭缝波导组合而成。所提出的传感器表现出高场增强,在785nm波长处的最大增强因子为7580.9,这表明这种混合等离子体光栅狭缝波导中的电场可以极大地增强。为了更好地表征该传感器在SERS应用中的性能,提出了总归一化体积增强因子(TNVEF),它由基于||近似的体积场增强和拉曼散射光收集效率共同决定。TNVEF用于表征结构参数对传感器的影响,并进一步优化传感结构。这种片上SERS传感器可以与光子平台上的微激光器和微复用器集成,以实现全集成的片上SERS检测系统。

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