Haq Tanveerul, Ruan Cunjun, Zhang Xingyun, Ullah Shahid, Fahad Ayesha Kosar, He Wenlong
School of Electronic and Information Engineering, Beihang University, Beijing 100191, China.
Beijing Key Laboratory for Microwave Sensing and Security Applications, Beihang University, Beijing 100191, China.
Sensors (Basel). 2020 Mar 30;20(7):1916. doi: 10.3390/s20071916.
In this paper, an extremely sensitive microwave sensor is designed based on a complementary symmetric S shaped resonator (CSSSR) to evaluate dielectric characteristics of low-permittivity material. CSSSR is an artificial structure with strong and enhanced electromagnetic fields, which provides high sensitivity and a new degree of freedom in sensing. Electromagnetic simulation elucidates the effect of real relative permittivity, real relative permeability, dielectric and magnetic loss tangents of the material under test (MUT) on the resonance frequency and notch depth of the sensor. Experiments are performed at room temperature using low-permittivity materials to verify the concept. The proposed design provides differential sensitivity between 102% to 95% as the relative permittivity of MUT varies from 2.1 to 3. The percentage error between simulated and measured results is less than 0.5%. The transcendental equation has been established by measuring the change in the resonance frequency of the fabricated sensor due to interaction with the MUT.
本文基于互补对称S形谐振器（CSSSR）设计了一种极其灵敏的微波传感器，用于评估低介电常数材料的介电特性。CSSSR是一种具有强电磁场增强效应的人工结构，它在传感方面提供了高灵敏度和新的自由度。电磁仿真阐明了被测材料（MUT）的实相对介电常数、实相对磁导率、介电损耗角正切和磁损耗角正切对传感器谐振频率和陷波深度的影响。在室温下使用低介电常数材料进行实验以验证该概念。当MUT的相对介电常数从2.1变化到3时，所提出的设计提供了102%至95%的差分灵敏度。模拟结果与测量结果之间的百分比误差小于0.5%。通过测量所制造传感器与MUT相互作用导致的谐振频率变化，建立了超越方程。
