钌杂配体配合物修饰的InO和SnO纳米晶体中的电子注入效应。

Electron injection effect in InO and SnO nanocrystals modified by ruthenium heteroleptic complexes.

作者信息

Tokarev Sergey, Rumyantseva Marina, Nasriddinov Abulkosim, Gaskov Alexander, Moiseeva Anna, Fedorov Yuri, Fedorova Olga, Jonusauskas Gediminas

机构信息

A. N. Nesmeyanov Institute of Organoelement Compounds, Russian Academy of Sciences, 28 Vavilova str., 119991, Moscow, Russia.

Chemistry Department, M. V. Lomonosov Moscow State University, 119991 Moscow, Russia.

出版信息

Phys Chem Chem Phys. 2020 Apr 15;22(15):8146-8156. doi: 10.1039/c9cp07016h.

DOI:10.1039/c9cp07016h

PMID:32249864

Abstract

In this work, the optical characteristics and conductivity under photoactivation with visible light of hybrids based on nanocrystalline SnO2 or In2O3 semiconductor matrixes and heteroleptic Ru(ii) complexes were studied. The heteroleptic Ru(ii) complexes were prepared based on 1H-imidazo[4,5-f][1,10]phenanthroline and 2,2'-bipyridine ligands. Nanocrystalline semiconductor oxides were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, SEM and single-point BET methods. The heteroleptic Ru(ii) complexes as well as hybrid materials were characterized by time-resolved luminescence and X-ray photoelectron spectroscopy. The results showed that the surface modification of SnO2 nanoparticles with heteroleptic ruthenium complexes led to an increase in conductivity upon irradiation with light appropriate for absorption by organometallic complexes. In the case of In2O3, the deposition of Ru(ii) complexes resulted in a decrease in conductivity, apparently due to the special structure of the surface layer of the semiconductor.

摘要

在这项工作中，研究了基于纳米晶SnO₂或In₂O₃半导体基质与杂配Ru(ii)配合物的杂化物在可见光光激活下的光学特性和电导率。杂配Ru(ii)配合物是基于1H-咪唑并[4,5-f][1,10]菲咯啉和2,2'-联吡啶配体制备的。通过化学沉淀并随后进行热退火获得了纳米晶半导体氧化物，并用XRD、SEM和单点BET方法对其进行了表征。通过时间分辨发光和X射线光电子能谱对杂配Ru(ii)配合物以及杂化材料进行了表征。结果表明，用杂配钌配合物对SnO₂纳米颗粒进行表面改性导致在照射适合有机金属配合物吸收的光时电导率增加。在In₂O₃的情况下，Ru(ii)配合物的沉积导致电导率降低，这显然是由于半导体表面层的特殊结构所致。