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基于金纳米粒子修饰的取向 GaN 纳米线阵列/聚多巴胺杂化界面的高灵敏无标记电化学免疫传感器。

A highly sensitive label-free electrochemical immunosensor based on an aligned GaN nanowires array/polydopamine heterointerface modified with Au nanoparticles.

机构信息

College of Life Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.

出版信息

J Mater Chem B. 2019 Mar 7;7(9):1442-1449. doi: 10.1039/c8tb03233e. Epub 2019 Feb 5.

DOI:10.1039/c8tb03233e
PMID:32255015
Abstract

Aligned GaN nanowire arrays show great potential not only in optoelectronic devices, but also in sensitive biosensor applications, owing to their excellent chemical stability and biocompatibility, as well as high electron mobility and surface-to-volume ratio. However, to construct electrochemical immunosensors, proper surface modification of GaN nanowires, which can enable efficient charge transfer and provide large densities of immobilization sites for antibodies to anchor, is still challenging. Herein we demonstrate a highly sensitive label-free electrochemical immunosensing platform based on the integration of polydopamine (PDA) on a GaN nanowire surface. The PDA polymer was self-assembled on GaN nanowire surfaces via organic polymerization. The interface dipole layer generated at the GaN nanowire array/PDA polymer heterointerface enabled efficient charge transfer. The aligned GaN nanowire array/PDA hybrids were further modified with gold nanoparticles for subsequent covalent binding of antibodies. The fabricated immunosensor yielded a wide linear range between 0.01 and 100 ng ml and a detection limit as low as 0.003 ng ml for the detection of alpha-fetoprotein (AFP). The immunosensor showed good selectivity, reproducibility, and stability and was utilized in human serum samples for AFP detection. This work demonstrates the superiority of taking advantage of a nanowire array configuration and a semiconductor/polymer heterointerface in an immunosensing platform for sensitivity enhancement.

摘要

排列整齐的 GaN 纳米线阵列不仅在光电设备中具有巨大的应用潜力,而且在敏感的生物传感器应用中也具有巨大的应用潜力,这归因于它们具有优异的化学稳定性和生物相容性、高电子迁移率和大的比表面积。然而,为了构建电化学免疫传感器,GaN 纳米线需要进行适当的表面修饰,这可以实现有效的电荷转移,并为抗体的固定提供大量的固定化点。在此,我们展示了一种基于聚多巴胺(PDA)在 GaN 纳米线表面的集成的高灵敏度无标记电化学免疫传感平台。PDA 聚合物通过有机聚合自组装在 GaN 纳米线表面。GaN 纳米线阵列/PDA 聚合物异质界面上产生的界面偶极层促进了有效的电荷转移。然后,将排列整齐的 GaN 纳米线阵列/PDA 杂化材料进一步修饰金纳米粒子,用于后续抗体的共价结合。所制备的免疫传感器在检测甲胎蛋白(AFP)时,在 0.01 到 100ngml 之间呈现出宽的线性范围,检测限低至 0.003ngml。该免疫传感器具有良好的选择性、重现性和稳定性,并用于人血清样品中 AFP 的检测。这项工作证明了在免疫传感平台中利用纳米线阵列结构和半导体/聚合物异质界面来提高灵敏度的优越性。

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