Jiang Qiwang, Wang Jie, Jiang Yan, Li Long, Cao Xingzhong, Cao Minhua
Key Laboratory of Cluster Science, Ministry of Education of China, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China.
Nanoscale. 2020 Apr 30;12(16):8858-8866. doi: 10.1039/d0nr00801j.
VSe2 is a typical transition metal dichalcogenide with metallic conductivity, which makes it a potentially promising electrode material for lithium-ion batteries (LIBs). However, further research into the VSe2 nanomaterial for electrochemical applications has been seriously impeded by the practical difficulty of synthesizing phase-pure VSe2. In this work, Se vacancy-rich VSe2 nanosheets were synthesized by a one-step solvothermal method with suitable reactants. Benefiting from the strong reduction ability of hydrazine hydrate, V4+ was partly reduced into V3+, resulting in abundant Se vacancies being generated in situ in the as-obtained VSe2 nanosheets. Positron annihilation lifetime spectroscopy, X-ray absorption spectroscopy and photoluminescence spectroscopy all confirmed the existence of Se vacancies. When applied as the anode material for LIBs, the VSe2 nanosheets can deliver a remarkable reversible capacity of 1020 mA h g-1 at 0.1 A g-1 after 100 cycles, and even at 2 A g-1 a high specific capacity of 430 mA h g-1 is reached. Electrochemical characterizations further reveal that the Se vacancies in the VSe2 nanosheets can significantly enhance lithium-ion diffusion kinetics and increase the number of electrochemical active sites, which are responsible for the good lithium-storage performance. This work may provide an alternative approach for rational design of other high-performance electrode materials for LIBs to satisfy demand for future sustainable development.
VSe2是一种具有金属导电性的典型过渡金属二硫属化物,这使其成为锂离子电池(LIBs)潜在的有前景的电极材料。然而,由于合成纯相VSe2存在实际困难,对用于电化学应用的VSe2纳米材料的进一步研究受到严重阻碍。在这项工作中,通过使用合适的反应物采用一步溶剂热法合成了富硒空位的VSe2纳米片。受益于水合肼的强还原能力,V4+部分还原为V3+,导致在所得的VSe2纳米片中原位产生大量硒空位。正电子湮没寿命谱、X射线吸收光谱和光致发光光谱均证实了硒空位的存在。当用作LIBs的负极材料时,VSe2纳米片在0.1 A g-1下循环100次后可提供1020 mA h g-1的显著可逆容量,甚至在2 A g-1时也能达到430 mA h g-1的高比容量。电化学表征进一步表明,VSe2纳米片中的硒空位可显著增强锂离子扩散动力学并增加电化学活性位点的数量,这是其良好储锂性能的原因。这项工作可能为合理设计用于LIBs的其他高性能电极材料提供一种替代方法,以满足未来可持续发展的需求。