用于量子密钥分发发送器设备的130纳米互补金属氧化物半导体工艺中的集成电子学。

Integrated electronics in 130 nm CMOS process for quantum key distribution sender device.

作者信息

Wang Xinzhe, Liang Futian, Feng Bo, Zhu Chenxi, Zhu Yulong, Jin Ge

机构信息

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

出版信息

Rev Sci Instrum. 2020 Mar 1;91(3):034701. doi: 10.1063/1.5123238.

DOI:10.1063/1.5123238

PMID:32259995

Abstract

Quantum Key Distribution (QKD) is the most mature method for implementing commercial quantum communications in practice. As part of the miniaturization of practical QKD devices, an integrated electronic system in the 130 nm complementary metal oxide semiconductor process is presented for the QKD sender device. The electronics provide driving signals for the optics at the sender terminal of the quantum channel in QKD and consist mainly of three key modules, namely, a laser diode driver with a high slew rate, a high-speed physical random number generator, and a pre-driver for the electro-optic modulator. The electronic system is designed to operate at frequencies as high as 625-MHz to accommodate the frequency of the QKD system. The high degree of integration is advantageous for miniaturizing QKD sender devices.

摘要

量子密钥分发（QKD）是在实践中实现商业量子通信最成熟的方法。作为实用QKD设备小型化的一部分，本文提出了一种采用130纳米互补金属氧化物半导体工艺的集成电子系统，用于QKD发送器设备。该电子设备为QKD量子通道发送端的光学器件提供驱动信号，主要由三个关键模块组成，即具有高转换速率的激光二极管驱动器、高速物理随机数发生器以及电光调制器的预驱动器。该电子系统设计为在高达625兆赫兹的频率下运行，以适应QKD系统的频率。高度集成有利于QKD发送器设备的小型化。