Hai Xin, Mao Quan-Xing, Wang Wen-Jing, Wang Xiao-Feng, Chen Xu-Wei, Wang Jian-Hua
Research Center for Analytical Sciences, College of Sciences, Northeastern University, Shenyang, China.
J Mater Chem B. 2015 Dec 21;3(47):9109-9114. doi: 10.1039/c5tb01954k. Epub 2015 Nov 9.
Boron-doped graphene quantum dots (B-GQDs) are prepared via a one-pot acid-free microwave approach with graphene oxide as the carbon source and borax as the boron source. Boron atoms are incorporated into the graphene framework by attacking the defects in the graphene structure, deriving an atomic percentage of 1.44% in the final product. Boron atom doping into the graphene structure and restoration of defects in the graphene structure bring the obtained B-GQDs favorable photoluminescence behaviors. The as-prepared B-GQDs exhibit excitation-independent photoluminescence behaviors with an excitation/emission maximum at 320/430 nm, and a fluorescence quantum yield of 21.1%. Moreover, stable photoluminescence is observed within a wide range of pH 3.0-11.0. A tolerance to an external ionic strength of up to 2.0 mol L KCl along with an excellent anti-photobleaching capability is achieved. The standard MTT assay suggests that the B-GQDs are of low cytotoxicity with favorable biocompatibility, and a cell viability of 87% could be achieved at 4.0 mg mL of B-GQDs. The practical application of B-GQDs in bio-analysis is demonstrated by bio-imaging of HeLa cells.
以氧化石墨烯为碳源、硼砂为硼源，通过一锅无酸微波法制备了硼掺杂石墨烯量子点（B-GQDs）。硼原子通过攻击石墨烯结构中的缺陷掺入石墨烯骨架中，最终产物中的原子百分比为1.44%。硼原子掺杂到石墨烯结构中以及石墨烯结构中缺陷的修复赋予了所得B-GQDs良好的光致发光行为。所制备的B-GQDs表现出与激发无关的光致发光行为，激发/发射最大值在320/430 nm，荧光量子产率为21.1%。此外，在pH 3.0-11.0的宽范围内观察到稳定的光致发光。实现了对高达2.0 mol L KCl的外部离子强度的耐受性以及优异的抗光漂白能力。标准MTT法表明B-GQDs具有低细胞毒性和良好的生物相容性，在4.0 mg mL的B-GQDs下细胞活力可达87%。HeLa细胞的生物成像证明了B-GQDs在生物分析中的实际应用。
