Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai 600085, Tamil Nadu, India.
Department of Analytical Chemistry, University of Madras, Guindy Campus, Chennai 600085, Tamil Nadu, India.
J Nanosci Nanotechnol. 2020 Sep 1;20(9):5426-5432. doi: 10.1166/jnn.2020.17814.
Photocatalysts provide excellent potential for the full removal of organic chemical pollutants as an environmentally friendly technology. It has been noted that under UV-visible light irradiation, nanostructured semiconductor metal oxides photocatalysts can degrade different organic pollutants. The SnSiO/rGO nanocomposite was synthesized by a hydrothermal method. The SnSiO nanoparticles hexagonal phase was confirmed by XRD and functional groups were analyzed by FT-IR spectroscopy. The bandgap of SnSiO nanoparticles (NPs) and SnSiO/GO composites were found to be 2.7 eV and 2.5 eV, respectively. SEM images of samples showed that the flakes like morphology. This SnSiO/rGO nanocomposite was testing for photocatalytic dye degradation of MG under visible light illumination and excellent response for the catalysts. The enhancement of photocatalytic performance was mainly attributed to the increased light absorption, charge separation efficiency and specific surface area, proved by UV-vis DRS. Further, the radical trapping experiments revealed that holes () and superoxide radicals (·O₂) were the main active species for the degradation of MG, and a possible photocatalytic mechanism was discussed.
光催化剂作为一种环保技术,为完全去除有机化学污染物提供了极好的潜力。据指出,在紫外可见光照射下,纳米结构半导体金属氧化物光催化剂可以降解不同的有机污染物。SnSiO/rGO 纳米复合材料通过水热法合成。XRD 证实了 SnSiO 纳米颗粒的六方相,通过傅里叶变换红外光谱分析了官能团。SnSiO 纳米颗粒(NPs)和 SnSiO/GO 复合材料的能带隙分别为 2.7eV 和 2.5eV。样品的 SEM 图像表明,其具有片状形态。这种 SnSiO/rGO 纳米复合材料在可见光照射下对 MG 的光催化染料降解进行了测试,对催化剂表现出了极好的响应。光催化性能的增强主要归因于光吸收、电荷分离效率和比表面积的增加,这一点通过紫外可见漫反射光谱得到了证明。此外,自由基捕获实验表明空穴(h+)和超氧自由基(·O₂)是降解 MG 的主要活性物质,并讨论了可能的光催化机制。