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硫化镓范德华纳米线的气-液-固生长及光电器件应用

Vapor-Liquid-Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires.

作者信息

Sutter Eli, French Jacob S, Sutter Stephan, Idrobo Juan Carlos, Sutter Peter

机构信息

Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States.

Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States.

出版信息

ACS Nano. 2020 May 26;14(5):6117-6126. doi: 10.1021/acsnano.0c01919. Epub 2020 May 8.

Abstract

Nanowires of layered van der Waals (vdW) crystals are of interest due to structural characteristics and emerging properties that have no equivalent in conventional 3D crystalline nanostructures. Here, vapor-liquid-solid growth, optoelectronics, and photonics of GaS vdW nanowires are studied. Electron microscopy and diffraction demonstrate the formation of high-quality layered nanostructures with different vdW layer orientation. GaS nanowires with vdW stacking perpendicular to the wire axis have ribbon-like morphologies with lengths up to 100 μm and uniform width. Wires with axial layer stacking show tapered morphologies and a corrugated surface due to twinning between successive few-layer GaS sheets. Layered GaS nanowires are excellent wide-bandgap optoelectronic materials with = 2.65 eV determined by single-nanowire absorption measurements. Nanometer-scale spectroscopy on individual nanowires shows intense blue band-edge luminescence along with longer wavelength emissions due to transitions between gap states and photonic properties such as interference of confined waveguide modes propagating within the nanowires. The combined results show promise for applications in electronics, optoelectronics, and photonics, as well as photo- or electrocatalysis owing to a high density of reactive edge sites, and intercalation-type energy storage benefiting from facile access to the interlayer vdW gaps.

摘要

层状范德华(vdW)晶体的纳米线因其结构特性和新兴特性而备受关注,这些特性在传统的三维晶体纳米结构中是不存在的。在此,对GaS vdW纳米线的气-液-固生长、光电子学和光子学进行了研究。电子显微镜和衍射表明形成了具有不同vdW层取向的高质量层状纳米结构。vdW堆叠垂直于线轴的GaS纳米线具有带状形态,长度可达100μm,宽度均匀。具有轴向层堆叠的线由于连续的几层GaS片之间的孪晶而呈现锥形形态和波纹表面。层状GaS纳米线是优异的宽带隙光电子材料,通过单纳米线吸收测量确定其带隙为2.65eV。对单个纳米线的纳米级光谱研究表明,由于能隙态之间的跃迁以及纳米线内传播的受限波导模式的干涉等光子特性,纳米线呈现出强烈的蓝带边缘发光以及更长波长的发射。综合结果表明,由于具有高密度的活性边缘位点,其在电子学、光电子学和光子学以及光催化或电催化方面具有应用前景,并且由于易于进入层间vdW间隙,在插层型能量存储方面也具有应用前景。

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