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无铅卤化物CsCuI中的多重自陷发射

Multiple Self-Trapped Emissions in the Lead-Free Halide CsCuI.

作者信息

Chen Haijie, Pina Joao M, Yuan Fanglong, Johnston Andrew, Ma Dongxin, Chen Bin, Li Ziliang, Dumont Antoine, Li Xiyan, Liu Yanan, Hoogland Sjoerd, Zajacz Zoltán, Lu Zhenghong, Sargent Edward H

机构信息

The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G4.

Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3E4.

出版信息

J Phys Chem Lett. 2020 Jun 4;11(11):4326-4330. doi: 10.1021/acs.jpclett.0c01166. Epub 2020 May 18.

Abstract

Low-dimensional copper halides with high luminance have attracted increasing interest as heavy-metal-free light emitters. However, the optical mechanisms underpinning their excellent luminescence remain underexplored. Here, we report multiple self-trapped emissions in CsCuI. Power-dependent photoluminescence spectra reveal the appearance of multiple self-trapped emission peaks with increasing excitation power, and this emission behavior is explored across a temperature range of 80-420 K. The zero-dimensional structure and soft crystal lattice contribute to the multiple self-trapped emissions in CsCuI: this explains the origin of the broad emission and the luminescence mechanism in CsCuI and will assist in improving our understanding of the optical properties of other metal halides. We incorporate the CsCuI in light-emitting diodes that achieve a peak luminance of 140 cd/m and an external quantum efficiency of 0.27%.

摘要

具有高亮度的低维卤化铜作为无重金属发光体引起了越来越多的关注。然而,支撑其优异发光性能的光学机制仍未得到充分探索。在此,我们报道了CsCuI中的多重自陷激子发射。功率依赖的光致发光光谱显示,随着激发功率的增加,出现了多个自陷激子发射峰,并且在80-420K的温度范围内研究了这种发射行为。零维结构和软晶格促成了CsCuI中的多重自陷激子发射:这解释了CsCuI中宽发射的起源和发光机制,并将有助于增进我们对其他金属卤化物光学性质的理解。我们将CsCuI集成到发光二极管中,其峰值亮度达到140 cd/m ,外部量子效率为0.27%。

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