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用于高效X射线闪烁的CsCuI晶体中甲酸根掺杂诱导的多激子发射

HCOO Doping-Induced Multiexciton Emissions in CsCuI Crystals for Efficient X-Ray Scintillation.

作者信息

Wang Zisheng, Wang Lixiang, Xie Jiahao, Yang Yang, Song Yilong, Xiao Guanjun, Fu Yuhao, Zhang Lijun, Fang Yanjun, Yang Deren, Dong Qingfeng

机构信息

State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China.

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

出版信息

Small. 2024 Aug;20(33):e2309922. doi: 10.1002/smll.202309922. Epub 2024 Apr 9.

Abstract

Self-trapped exciton (STE) luminescence, typically associated with structural deformation of excited states, has attracted significant attention in metal halide materials recently. However, the mechanism of multiexciton STE emissions in certain metal halide crystals remains largely unexplored. This study investigates dual luminescence emissions in HCOO doped CsCuI single crystals using transient and steady-state spectroscopy. The dual emissions are attributed to intrinsic STE luminescence originating from the host lattice and extrinsic STE luminescence induced by external dopants, respectively, each of which can be triggered independently at distinct energy levels. Theoretical calculations reveal that multiexciton emission originates from structural distortion of the host and dopant STEs within the 0D lattice in their respective excited states. By meticulously tuning the excitation wavelength and selectively exciting different STEs, the dynamic alteration of color change in CsCuI:HCOO crystals is demonstrated. Ultimately, owing to an extraordinarily high photoluminescence quantum yield (99.01%) and a diminished degree of self-absorption in CsCuI:HCOO crystals, they exhibit remarkable X-ray scintillation characteristics with light yield being improved by 5.4 times as compared to that of pristine CsCuI crystals, opening up exciting avenues for achieving low-dose X-ray detection and imaging.

摘要

自陷激子(STE)发光通常与激发态的结构变形相关,近年来在金属卤化物材料中引起了广泛关注。然而,某些金属卤化物晶体中多激子STE发射的机制在很大程度上仍未得到探索。本研究使用瞬态和稳态光谱研究了HCOO掺杂的CsCuI单晶中的双发光发射。这两种发射分别归因于源自主体晶格的本征STE发光和由外部掺杂剂诱导的非本征STE发光,它们各自可以在不同的能级独立触发。理论计算表明,多激子发射源自0D晶格中主体和掺杂剂STE在各自激发态下的结构畸变。通过精心调整激发波长并选择性地激发不同的STE,展示了CsCuI:HCOO晶体中颜色变化的动态改变。最终,由于CsCuI:HCOO晶体具有极高的光致发光量子产率(99.01%)和较低的自吸收程度,它们表现出显著的X射线闪烁特性,与原始CsCuI晶体相比,光产额提高了5.4倍,为实现低剂量X射线检测和成像开辟了令人兴奋的途径。

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