Department of Chemistry, Chicago Center for Theoretical Chemistry, James Franck Institute, and Institute of Biophysics Dynamics, The University of Chicago, 5735 South Ellis Avenue, Chicago, Illinois 60637, United States.
J Phys Chem B. 2020 Jun 18;124(24):5039-5046. doi: 10.1021/acs.jpcb.0c03288. Epub 2020 Jun 4.
Molecular dynamics simulations and free energy sampling are employed in this work to investigate the surface affinity of the hydrated excess proton with two definitions of the interface: The Gibbs dividing interface (GDI) and the Willard-Chandler interface (WCI). Both the multistate empirical valence bond (MS-EVB) reactive molecular dynamics method and the density functional theory-based molecular dynamics (AIMD) were used to describe the hydrated excess proton species, including "vehicular" (standard diffusion) transport and (Grotthuss) proton hopping transport and associated structures of the hydrated excess proton net positive charge defect. The excess proton is found to exhibit a similar trend and quantitative free energy behavior in terms of its surface affinity as a function of the GDI or WCI. Importantly, the definitions of the two interfaces in terms of the excess proton charge defect are highly correlated and far from independent of one another, thus undermining the argument that one interface is superior to the other when describing the proton interface affinity. Moreover, the hydrated excess proton and its solvation shell significantly influence the location and local curvature of the WCI, making it difficult to disentangle the interfacial thermodynamics of the excess proton from the influence of that species on the instantaneous surface curvature.
本工作采用分子动力学模拟和自由能采样方法,研究了水合过剩质子与两种界面定义(吉布斯分割界面(GDI)和威拉德-钱德勒界面(WCI))的表面亲和力。多态经验价键(MS-EVB)反应分子动力学方法和基于密度泛函理论的分子动力学(AIMD)都用于描述水合过剩质子物种,包括“车运”(标准扩散)传输和(Grotthuss)质子跳跃传输以及水合过剩质子净正电荷缺陷的相关结构。研究发现,过剩质子的表面亲和力与其在 GDI 或 WCI 上的关系呈现出相似的趋势和定量自由能行为。重要的是,过剩质子电荷缺陷的两种界面定义高度相关,彼此之间远非独立,从而削弱了在描述质子界面亲和力时一个界面优于另一个界面的观点。此外,水合过剩质子及其溶剂化壳显著影响 WCI 的位置和局部曲率,使得难以将过剩质子的界面热力学与其对瞬时表面曲率的影响分开。